UMB05S ZSELEC | Alldatasheet

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! Low F or ward Voltage Drop ! High Current Capability ! Plas t ic Material – UL Flammability 94V-O M e c ha n i c a l D a t a Maximum Ratings and Electrical Characteristics @TA=25°C unless ot herwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Mounted on glass epoxy PC board with 1.3mm 2 solder pad. 2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad. 3. M easured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1 of 2 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rec t ified Output Current (Note 1) @TA = 40°C A v erage Rectified Output Current (Note 2) @TA = 40°C IO 1.0 A Non-Repetit i ve Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 35 A I 2t Rating for Fusing (t < 8.3ms) I2t5 .0 A2s Forward Volt age per element @I F = 1.0A VFM 1.3 V P eak Rev e r s e C u r r e n t @ T A = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 5.0 500 µA Typi cal Junction Capacitance per leg (Note 3) Cj 13 pF Typi cal Thermal Resistance per leg (Note 1) R/G01JA R/G01JL 62.5 25 °C/W Operating and S torage Temperature Range Tj, TSTG -55 to +150 °C Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com UnitSy mbol Reverse Reco very Time (Note 4) trr 4. Meas 50 75 1.0 1.7 UMB05S – UMB10S UMB05S - UMB10S + H D E A J MB-S Dim M i n Max A 4.50 4. 95 B 3.60 4. 10 C 0.15 0. 35 D —0 . 2 0 E G 0.50 1.10 H 1.30 1. 70 J 2.30 2. 70 K 2.30 2. 70 L —3 . 0 0 All Di mensions in mm —0 . 20 40 7.00 K B G UMB 05S 1S 2S 4S 6S 8S 10S UMB UMB UMB UMB UMB UMB MIL-STD- 202, Method 208 ! Case: MB-S, Molded Plastic MIL-STD-202, Method 208 ! Polarity: As Marked on Case ! Weight: 0.22 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Terminals: Plated Leads Solderable per Alldatasheet

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 100 1 10 100 C , CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Single phase half-wave Hz resistive or inductive load 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise T ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W

5 Reverse Recovery

Time Characteristic and Test Circuit (+) (+) (-) (-) I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) 0.01 1.0 2.0 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 Cj ° Pulse width = 300 sm UMB05S - UMB10S UMB05S – UMB10S Alldatasheet