UMA1N KEXIN | Alldatasheet
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Mounting Cost and Area Can Be Cut In Half. Emitter-common Type. PNP Epitaxial Planar Silicon Transistor. Electrical Characteristics Ta = 25 <F o rT r 1a n dT r 2i nc o m m o n> Parameter Symbol Testconditons Min Typ Max Unit VI(off) VCC =- 5 V,IO =- 1 0 0A -0.5 VI(on) VO = -0.2V , IO =- 5 m A - 3 Output Voltage V O(on) IO/II = -10mA/-0.5mA -0.1 -0.3 V Input Current I I VI =- 5 V - 0 . 3 6 m A Output Current I O(off) VCC =- 5 0 V,VI =0 V - 0 . 5 A DC Current Gain G I VO =- 5 V,IO =- 5 m A 5 6 Input Resistance R 1 15.4 22 28.6 k Resistance Ratio R 2/R1 0.8 1 1.2 Transistion Frequency f T *V CE =- 1 0 V,IE =5 m A,f=1 0 0 M H z 2 5 0 M H z * Characteristics of built-in transistor Input Voltage V Marking Marking A1 Complex Digital Transistors UMA1N Absolute Maximum Ratings Ta = 25 <F o rT r 1a n dT r 2i nc o m m o n> Parameter Symbol Rating Unit Supply Voltage V CC -50 V Input Voltage V IN - 4 0t o+ 1 0 V Output Current I O -30 Collector Current I C(Max) -100 Power Dissipation P D * 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * 120mW per element must not be exceeded. mA
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves Equivalent Circuit UMA1N
www.kexin.com.cn 3 SMD Type Transistors UMA1N