UM9601

UM9601 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

¢ Low Inductance Shunt Mount Package Characterized for Microstrip * Microsemi Ruggedness and Reliability High Power Handling Capability | 6| © Low Bias Current Requirement * Excellent Distortion Properties © Cost Effective in High Quantity Applications

Description

The UM9601-UM9608 series of PIN diodes The Microsemi UM9601 series PIN diodes are wae developed for shunt mount applications in constructed using a fused-in-glass process microstrip circuits. Good switch performance is which results in a highly reliable, hermetic pack- demonstrated at frequencies from UHF to 4GHz age. The process utilizes symmetrical, full faced and higher. This performance is achicved using metallurgical bonds to both surfaces of the silicon discrete low inductance Microsemi PIN diodes chip. This construction greatly minimizes the nor- assembled with special hardware to permit mal parasitic inductance and capacitance found good olectrical and mechanical compatibility in conventional glass or ceramic packaged with microstrip transmission lines, diodes which employ straps, springs or whiskers. Design information is presented for prepara- The use of discrete UM9601-UM9608 diodes tion of microstrip circuit boards to accomodate greatly minimizes handling problems cormmonly these PIN diodes. A detailed design for a associated with passivated PIN diode chips while 900MHz quarter-wave antenna switch is given. maintaining good microwave performance. In This switch which employs a low cost UM9401 addition the power handling capability of the axial leaded PIN diode in conjunction with a UM9601-UM9608 series is considerably higher UM9601, performs with 30dB receiver isolation than PIN diode chips can provide. over a 100MHz bandwidth and with transmitter Environmentally, the UM9601-UM9608 series insertion loss of less than 0.4dB. This switch PIN diodes can withstand thermal cycling from can safely handle transmitter power levels up to -195°C to +300°C and exceed all military envi- 100 watts at infinite antenna SWR. ronmental specifications for shock, vibration, Typical Microwave Performance acceleration and moisture. SPST SPST SPNT* SPST SPST SPNT* Insertion Loss | Isolation Isolation | insertion Loss | Isolation Isolation

0 Bias 100mA 100mA 0 Bias 100mA 100mA

[owe [a | ae 0.5 0.20 30 36 0.20 25 31 1.0 0.25 26 32 0.20 22 28 1.5 0.35 22 28 0.20 20 26 2.0 0.50 18 24 0.25 7 22 3.0 1.00 15 21 0.25 15 21 4.0 1.50 13 19 0.40 14 20 ~ Performance based on SPST Measurements In 0.025" (.635mm) Microstrip Test Circuit. 7 gf fon A cinantons in hehe ad (rete Microsemi Corp. Watertown eas [| Meuron

Maximum Ratings Ratings @ 10A UM9601 - UM9604 | UM9605 - UM9608 toov [ 400v | ee umseo1 | uMa602 20°C/w | 4W | 37.5°C/W uMg9603 | UM9604 [sw = | sw | OMose? | Umosos [Free Air | 1.5W = osw [=| | Gmosor | umosos Peak Power 1yS Single Pulse 25KW 10KW at 25°C Ambient Operating and 65° 0 Storage Temperature 65°C to +175°C Electrical Specifications (at 25°C) UM9601-UM9604_| UM9605-UM9608 Test Symbol | Min [ "Min | Typ | Max | Units | Condition | Series T= 100mA Parallel V = 100V Total V = 100V | Secrnce 6 | = | = [v2 | = | = fos | [iti | Carrier _ fe Z pete fe) = P= a |= = oe fr Forward = [ake IRegion _ Selection Guide The following chart serves as a general guide for indicating the most likely diode from the series for a given application. Applications Recommended Types 1. High isolation switches to 2GHz at low de drive UM9601 (Affixes to microstrip 2. Quarter-wave antenna switches to 100 watts. ground plane.) 3. Priced for high volume commercial applications. | UM9603 (Affixes to microstrip backing plate.) High voltage rating version of UM9601 and UM9603, respectively for peak power handling to 3KW. UM9602, UM9604 1. Low insertion loss switches to 4GHz. UM9605 (Affixes to microstrip 2. Low distortion antenuator applications. ground plane.) | UM9607 (Affixes to microstrip backing plate.) High voltage version of UM9605 and UM0607 ‘UM9606, UM9608 for peak power handling to 10KW.

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vs Forward Current (F = 100MHz) Pulse Thermal impeaance sooo SHITE CEE Line rH 5 PT TT Ty 4 vo RMSE Ha y a | | | tT MO S22: S23, 522i Bie Boe Sec, Fl | tT + SSP acaiiii mani Sesto TT § nd vniss unpage et] | SMB) seh ati. mess. eesti See: SEs 3 _- okt tHiflensea omen iS ERIE TMT Cy 8 10 4 Zoo ean | 6 | sob tC CoS ee Bor 4 EEE FFE +t | |_| TORWARO CURRENT PULSE WITH a Typical R, vs Voltage and Frequency Typical R, vs Voltage and Frequent UM9601 “aSvaseo4 Power Rating ‘UM9605 *Ainage08 oy ‘0 Po 09 | ,L-ET Ty TT /) ; | | & |ONTTH: i" ~ RP SSEED | or i LZ sme ‘| Loot one Py i PCOCCOINE Fy : oer 2. NI i ——_. Ca oem Fi LTE NA a ‘ 2 Ne n~ Reverse Voltage (VI V, ~ Reverse Voltage (V) ‘Typical Forward Gise Typical Third Order ( =) Intermodulation Distortion Intermodulation Distortion \\R “a vs Nominal Carrier Frequency vs Forward Blas Current at 20dBm per Channel at 20dBm per Channel ~ \\% i =} gw mya i g Z F ro a | | ge 38 Eo ro [| oe a 10 0 so 100 ~ 5 0 Ey 50 100 Seo PLEASANT STREET « WATERTOWN, MA 2172 TEL. (617) 926-0404 « FAX (617) 924-1235, 6-45 PRINTED NUSA

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Microwave Characterization The UM9601-UM9608 series has been These circuits simulate simple SPST designed and characterized as shunt switch switches. Many designs require multithrow elements at frequencies to 4GHz in microstrip switches. It is important to recognize that a circuits. Performance curves are given which = multithrow switch will have 6dB higher demonstrate switch performance in 0.025” isolation than indicated for SPST switches. (.635mm) alumina microstrip. Also, a multithrow switch using shunt mounted The performance data were derived by PIN diodes require the diodes be placed TG | evaluating externally biased microstrip quarter-wavelength from the common port. Circuits in which a UM9601 diode was installed. A further improvement in switch perform- Each circuit consisted of a 1 inch length of 50 ance may be achieved by using 2 shunt PIN ohm nominal impedance 0.025” (.635mm) diodes in each arm spaced a quarter-wave- thick alumina microstrip and two SMA_ length from each other. In this case the connectors. The data shown include the board isolation of each section will be twice the dB and connector loss. Measurements performed value of a SPSI switch. Tne insertion loss due using 0.050” (1.27mm) alumina substrates to the diodes should be less than twice the show similar performance at frequencies to insertion loss of an SPST section due to the 1.5GHz. transforming effect of the quarter-wave line on the capacitance of a single diode. Bias Supply out 00 wl) Microwave Test Circuit

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Typical Insertion Loss vs Frequency 0.025” (0.635mm) Alumina Microstrip SPST Switch ta Diode at Zero Bias at TTA Q 0.025" (0.635mm) Alumina Microstrip SPST Switch 8 /| Diode Current = 100m z° RAGABT 1 RNBRRE aay Li YVrr | ‘TT * 23] LTA N cl | [ttt tt aN rr rr z.. FREQUENCY (GHz) ~~ g w Isolation vs Frequency and Diode Current 0.025" (0.635mm) Alumina Microstrip SPST Switch 28 a 6 ‘M9601 - UM9604 a 2 os | fai nnn > o | it {|_| ft tf oa 0 20 0 100 200 DIODE CURRENT (ma) TEL. (617) 926-0404 + FAX (617) 924-1235 6-48 PRINTEDINUSA

Installation in Microstrip | The cup type flange on the UM9601, For solder adhesion the microstrip may be UM9602, UM9605 and UM9606 is designed to heated to solder melting temperature (up to be affixed to the ground plane surface of a 300°C) with no damage to the diode. microstrip board as shown. The UM9603, Conductive epoxy may also be employed. The UM9604, UM9607 and UM9608 were designed thermal resistance of solder mounted to be affixed to a backing plate as shown. Itwas + UM9601-UM9604 in their test boards was less experimentally determined that at frequencies than 20° C/W; for the UM9605-UM9608 thermal greater than 2GHz the anode of the diode _ resistance was less than 30°C/W. should be approximately 0.010" (.254mm) | 6 | above the top surface of the microstrip for lowest insertion loss. 'UM9601/UM9602 Microstrip Mount 'UM9603/UM9604 Microstrip Mount (UM9605/UMS606 UM9607/UM9608 x0" (nom TEN. —cocdtnmy( Sei Stun SSR POON ‘ marpensmeortal | SS °_e 025" (0. 635mm) MICROSTRIP Sg RCW. ‘i ee ee iid Fare | ae an arcane PLATE inant h b— aes — Design Example - 900MHz Antenna Switch An example of a practical circuit design The CW power handling capacity is using a UM9601 diode is a quarter-wave determined by the allowable power dissipation antenna switch covering the frequency of 800- of the series mounted UM9401. Using a gap in 900MHz. The circuit design for this switch is _ the line of 0.190” (4.82mm) and lead soldered shown and was constructed using 0.025” attached spacing of 0.250” (0.635mm) the (0.645mm) alumina microstrip. power rating of the UM9401 is 6 watts at a 25°C This antenna switch uses a series mounted ambient. This was determined by performing a diode and a shunt mounted diode. The thermal resistance measurement on the circuit UM9601 was selected for the shunt mounted mounted UM9401. The relationship that derives device (SPST performance at 1GHz: 0.2dB the maximum transmitter power, Pr is: insertion loss and 25dB isolation) and because 2 it is the lowest cost diode in the UM9601- Pr= Poss 7, / 7+1 UM9608 series. A UM9401 axial lead diode ™ R® 20 was chosen for the series mounted device. Tne performance of this switcn Is displayed = : in the graphs and in the following table. It where o = maximum antenna SWR should be noted that the loss values are actual Using resistance values for the UM9401 and measured numbers including losses due to the ~UM9601 the maximum transmitter power curve capacitors, bias networks, connectors as well is given and shows that this circuit is able to as the board. In a typical radio application handle 100 watts of transmitter power at where the antenna switch circuit board is 100mA forward biased and totally mismatched integrated in the same microstrip board that antenna at an ambient temperature of 60°C. contains transmitter and receiver elements the For a perfectly matched antenna the power connector loss is eliminated. This will resultin handling increases to 400 watts under the lower overall insertion loss values than same bias and ambient temperature indicated here. conditions.

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Distortion is an important consideration in state (forward bias of 100mA) is expected to be the selection of a PIN diode antenna switch at least 90dB below the carrier for a 50 watt design. The UM9401 and UM9601 PIN diodes transmitter level. In the receiver state (zero are designed for low distortion applications. bias) the intermodulation distortion caused by The level of distortion producedby this SOOMHz two in-band signals at OdBm are estimated to antenna switch when operated in the transmit be at least 100dB below this level. Maximum Transmitter Power vs Forward Current for UM9601/UM9401 900MHz Microstrip Antenna Switch eee POWER SUPPLY [——-—F20 = Son Fae ft soe Fg ANT Es ae ee Fries mw pee | 3 [4 & SaaS Ss Zo = 800 5 eS 2/4 @esoMnz

3 DP ee IANIAY 30pF Zo = Son) 30pF

¢ [Ree RY oe 5 tor ee SNE “ne i a a en oe oe ns | t

7 Fee SS

AMBIENT TEMPERATURE (°C) Antenna Switch Performance Frequency Range —800-900MHz |. Transmit State ll. Receive State (1 = 100mA. Ts = 60°C) (Zero Bias) A. Maximum Transmitter Power - 100 watts A. Receiver Insertion Loss - 0.6-0.7dB (antenna SWR = ©) B. intermodulation Distortion - -100dB B. Maximum Transmitter Power - 400 watts Pin = OdBm (antenna SWR = 1) | C. Transmitter Insertion Loss - 0.4dB D. Receiver Isolation - 31dB E. Harmonic Distortion - -90dB (Pr = 100 watts)

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Receiver Isolation vs Frequency Antenna Switch Insertion Loss and Diode Current 19} 35 RECEIVER INSERTION, qm —— os L088 j= =F 4 oop OO ey as “ i en gop ete i) é en 8 Boa a en E : || ty es a

2 INSERTION Loss 3 m

e= 100ma) Fit Tt ° 750 800 850 900 850 1000 FREQUENCY (MHz) 760608838 s00 300 To FREQUENCY (MHz) TEL. (617) 926-0408 + FAX (617) 924-1235 651 PrweD NUSA

rs" 982 al “ [=] [= 1x ca —t = 40" f 6Bomy q q (Stem) — FL = (A |e oe {2 See ts0.8mm) | “H]" b05~ @htimm (43mm) 190" (413mm) "| | sy rat 020" ) Substrate Drawing Assembly Drawing Parts List 5000pF Feed through Filter Erie 1270-016 C1-C4 30pF Chip Capacitor Vitramon VJO805A300KF PIN Diode Unitrode UM9401 [D2 | __ PIN Diode Unitrode UM9601 J1-J3 | SMA Connector | Cablewave 971-028 Vectronics Microwave

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