UM9301 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Specitied low distortion © Low rectification properties at low reverse bias ¢ Resistance specified at 3 current points © High reliability fused-in-glass construction
Description
The UM9301 PIN Diode utilizes a special utilized for gain and slope control in CATV overall chip geometry with an extremely amplifiers. Low distortion and high dynamic thick intrinsic “I region, to offer unique range are characteristic of the diodes’ capabilities in both RF switch and attenuator outstanding performance. applications. Volume production also makes The UM9301 is also appropriate for switch the diode an economical choice suitable tor applications, when little or no bias voltage is many commercial low power equipments. available. Frequent applications occur in The UM9301 has been designed for use in portable 12 volt-powered communications bridged TEE attenuator circuits commonly equipments, operating at frequencies as low as 2 MHz. MAXIMUM RATINGS Reverse Voltage (V,) — Valts (\\, = 10 pA) 75V Average Power Dissipation @ (P,) 1.0W (Derate linearly to 176°C) Leads ‘ in. (12.7mm) Total to 25°C Contact Operating and Storage Temperature Range — 65°C to + 175°C Microsemi Corp, Watertown
634 The lode experts
Electrical Specifications (25°C) [ter Min [typ [max unite [ conaitione Diode Resistance Rs 17 3.0 { = 100 mA, f = 100 MHz 80 | 150 | = 1mA,f = 100 MHz 5000 | = 0.01 mA, f = 100 MHz Current forRs = 752 In| 05 | 14 | 2.0 | ma _| ft = 100MHz [Capacitance Gr | | | 0 | pr [v=owr= wom | Return Loss Frequency Range: 10 - 300MHz Rs = 752 @ 100 MHz Diode Terminates 752 line Second Order Distortion | = | © | - | f, = 10 MHz, f, = 13 MHz P_ = 50 dBmV, See Test Circuit
70 F, = 67 MHz, F, = 77 MHz
P = 50 dBmV, See Test Circuit Third Order Distortion 75 F, = 10 MHz, F; = 13 MHZ | P_= 50 dBmV, See Test Circuit Triple Beat; 205 + 67 — 77 MHz P = 50 dBmV, See Test Circuit Cross Modulation Distortion 75 12 Channel Test P=50 dBmV, See Test Circuit Dix Hills Test Set [Reese curent ie [|p wpm [vee Carrier Lifetime + fo} [| [| t= 10mA DIODE RESISTANCE FORWARD CURRENT VS VS nIONF CURRENT FORWARD VOLTAGE (TYPICAL) (TYPICAL) 100K ae 1000 eS vox EET beet itt E ES = Saas Sy CL S Fea ‘g 1000 eet eet me aeegiiii ae eeil § oor
2 BSH 5 10 Hang atserae
ra 0S A | < ° BE AS 2 oo LLU omc TT TT TTT 2 RRS ARES « Se $ FeeeAAr ess
2 SS ee 8 AAA
g en Sc TT rE AL | sg CC TTT SE, ESES===S=== Seti meet eeositiemmsts SAREEBESEBES Loon a , COO Coo aU TTT o : 1 10 +00 SR 7 A @ 4044 Diode Current (mA) Forward Voltage (Volts)
580 PLEASANT STREET - WATERTOWN, MA 02172
TEL. (617) 926-0404 « FAX (617) 924-1235 6-35 PRINTED INUSA
NORMALIZED Rg VS TEMPERATURE TEST CIRCUIT FOR DISTORTION MEASUREMENTS at TT ELLE TT +]
3 REREeA 6600 pF 6600 pF
3 LI ° Ke
fy Z4 Input 3 33uhy 34.72 S3uHy 2 41 5000 pF Supply 7 for 10dB Attenuation Temperature (°C) TYPICAL BRIDGED TEE ATTENUATOR PERFORMANCE DIODE CURRENT DISTORTION VS ATTENUATION UM9301 ATTENUATION CR rssssssszss2sssss=:=s==2 30 ECE “Tete HT
2 BRS & NT
3 NAOT z LEN Te
27 Bee eee 5
3 sss5aseas<esceseasaesnes| 3 70 MINE 1
3 It A 2 CUI
= eT) [[ input rower = “+60 nv ivsanaiensnssiaoasaiil Lear oy CECE TTT eee wwii MECHANICAL SPECIFICATIONS {jp £027" 68mm ———4 T TEL. (617) 926-0404 « FAX (617) 924-1235 6-36 PRINTEDINUSA