UM4000 MICROSEMI | Alldatasheet

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Technical content

Features

© Power dissipation to 37.5W * Voltage ratings to 1000V * Series resistance rated at 0.52 ¢ Carrier lifetime greater than 5us

Description

The UM4000 and UM4900 series feature bias current. Similarly, peak RF voltages can high power PIN diodes with long carrier life- be handled well in excess of applied reverse times and thick I-regions. They are especially bias voltage. suitable for use in low distortion switches Both series have been fully qualified in and attenuators, in the HF through S band high power UHF phase shifters and mega- frequencies. While both series are electri- watt peak-power duplexers, accumulating cally equivalent, the UM4900 series have thousands of hours of proven performance. higher power ratings due to a shorter thermal Both types have been used in the design of path between chip and package. High charge antenna selectors and couplers, where induc- storage and long carrier lifetime enable high _ tive and capacitive elements are switched in RF levels to be controlled with relatively low and out of filter or cavity networks. MAXIMUM RATINGS Average Power Dissipation and Thermal Resistance Ratings = =a A 25°C Pin Temperature zw s°cw | 3rsw] 4°cIw B&E (Axial Leads) | % in. (12.7mm) Total Length to 25°C Contact 12W | 12.5°C/W 12W | 12.5°C/W B&E (Axial Leads) | Free Air 2.5W _ 2.5W - C (Studded) 25°C Stud Temperature 25W 6°CIW | 37.5W 4°CIW D (Insulated Stud) | 25°C Stud Temperature 18.75W B°CWW 25W 6°CIW Peak Power Dissipation Rating All Packages 1 us Pulse (Single) at 25 °C Ambient Operating and Storage Temperature Range: 65°C to + 175°C Watertown

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Voltage Ratings (25°C) Reverse Voltage (V,) — Volts Types (Ip = 10 » Amps)

100 UM4001 UM4901

200 UM4002 uMm4902

400 — —

600 UM4006 UM4906 | 6|

1000 UM4010 _

Electrical Specifications (25°C) UM4000 Test UM4900 Conditions Total Capacitance (Max) Cc, 3 pF 100V, 1MHz Series Resistance (Max) Rs 0.52 400mA, 100MHz Parallel Resistance (Min) Rp 10 KQ 100V, 100MHz Carrier Lifetime (Min) T Sus I; = 10mA Reverse Current (Max) Ia 10pA. Va = Rating |-Region Width (Min) Ww 150um - TYPICAL FORWARD RESISTANCE FORWARD CURRENT (F = 100 MHz) TYPICAL PARALLEL RESISTANCE CHARACTERISTIC {eos tttioon OCHS ELAR z% BmeanD 30 WH2 a vo AO TT TTT 8 200 zal 4 Soest eH TT es ae | [ | 00 wwe | Slee Mg CY eee © oo: a= aeZe eee Frye BN AA a ee De a meses Sees esse Sec sal SE 12 5 10 2050 100200500 3000 CO HET SS os OTE TT TT Se a a SY Ip FORWARD CURRENT 50 PLEASANT STREET « WATERTOWN. MA 2172 TEL. (617) 926-0404 « FAX (617) 924-1235 6-17 PRINTED INUSA

AXIAL LEADED DIODE ‘STUD MOUNTED DIODES EXT] os be NU Pe 2 IN g ,, h 5 LA TNA sake sm 5 0 £ a LF unatono ES\\V LN PLANWNAL ELINA ATT i ENN 2 LL DOAN aN Lit TT TN ee eeaN . N "> = 75. 100 128 «150 ~=«175 ‘oO 75 WOO 12 150 175 T. tEAD TeWwERATURE Pet STU TEMPERATURE (1 DC CHARACTERISTICS FORWARD VOLTAGE vs TYPICAL CAPACITANCE CHARACTERISTIC FORWARD CURRENT (TYPICAL) Fd SSS z, Ni > — g XI z a SO S| Py 2 mb oO bs Hz NN H SS SS SS SS SS a 6 XJ : SSS ES SS PCEESSCTEC | Bee = efi re ae a A 1 =A (SS SS = == S SS © [bee PSST TI == Fe ce a ee se sn oo os S| 1 2 9 41 2 50 100 200 500 1000 vwoL—p—Y V, ~ REVERSE VOLTAGE (V) === S==] P+ ft SS < THERMAL IMPEDANCE wal TTT or | + td ee ve~ FORWARD VOLTAGE oo b= une gz SSSSSseS em SSH ORDERING INSTRUCTIONS ot Ee menona wT g > ESS ato Part numbers of Microsemi PIN Diodes consist af the ltters = 4 z UM followed vr 2s Coe ee eee digits talento the aioe sence, the next two alge : == SSS = specily the minimum breakdown voltage in hundreds of vols. 2 SS The remaining letiers denote the package style. Reverse | 2 oe GER CARREEEEE polar (anode large end cap is avatabie for he © sve and 3 = GE Ze <lenoted by acon sacond ir R 2° For ami: oe RE RR i cS lad - " a or ao oo PULSE WIDTH (SEC)

80 PLEASANT STREET WATERTOWN, MAC2172

TEL. (617) 926-0404 - FAX (617) 924-1235 6-18 PRINTED INUSA