UM2300 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • LF band (100 KHz) PIN
  • Long Lifetime (80 ms typ.)
  • High Power (1 KW CW) · High Isolation (35 dB)
  • Low Loss (0.2 dB) · Very Low Distortion (IP3 = > 60 dBm)
  • Voltage Ratings to 1000 V

Description

Electrical Specifications (25°C) Test Min. Typ. Max. Units Conditions Diode Resistance RS 0.3 0.4 W F1 = 1 MHz, 100 mA Capacitance CT 15 20 pF F2 = 1 MHz, 100 V Reverse Current IR 10 mA @ Rated Voltage Carrier Lifetime t 60 80 ms If = 10 mA / 100 V IP3 50 60 dBm 2 WATT total, I f = 25 mA F1 = 0.999 MHz, F2 = 1.001 MHz

1.0 WATT/ tone

Thermal Resistance 1.0 °C / W 25°C Stud Temperature 0 20 40 60 80 100 120 140 160 180 200 Vr (VOLTS) 100 110 120 130 Ct (pF) TYPICAL CAPACITANCE vs REVERSE VOLTAGE

4 MHz

2 MHz

1 MHz

400 KHz

200 KHz

100 KHz

580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 PIN DIODE SWITCH UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less than 0.2 dB and isolation is greater than 35 dB (‘off ’state). The UM2300 series offers the lowest distortion perform- ance in both transmit & receive modes. Less than 10 mA forward bias is required to obtain an IP3 of 60 dBm at 150 KHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 KHz. Capacitance vs. reverse bias volt- age characteristic is flat down to 1 MHz. In attenuator configurations , the UM2300 produces extremely low distortion at low values of attenuator control current, & very low insertion loss ( 0.2 dB) in the ‘ 0 dB ’ attenuator state. Reverse Voltage ( VR ) DEVICE @ I R = 10 mA Voltage Ratings (25°C)

MSCOXXXA 12-14-98 DSW UM2300 <->(34989) UM2300 SERIES 0 100 200 300 400 500 600 700 800 900 1000 VR (Volts) -810 -710 -610 -510 -410 -310 -210IR (A) (MEAN) TYPICAL IR vs VR 150 oC 125 oC 100 oC 75 oC 50 oC 25 oC Vf [VOLTS] -610 -510 -410 -310 -210 -110 010 110 210 If [AMPERES] TYPICAL I-V CURVE 150 oC 125 oC 100 oC 75 oC 50 oC 25 oC .01 .1 1 10 100 If (mA) 100 1000Rs (Ohms) TYPICAL RS vs FORWARD BIAS CURRENT 010 110 210 REVERSE VOLTAGE (VOLTS) 310 410 510 610 710 810 910 Rp (OHMS) TYPICAL Rp vs REVERSE VOLTAGE 10KHz 20KHz 40KHz 100KHz 200KHz 400KHz 1MHz 2MHz 4MHz 10MHz

MSCOXXXA 12-14-98 DSW UM2300 <->(34989) UM2300 SERIES -310 -210 -110 010 110 If [AMPERES] -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 TCVf [mV/oC] TYPICAL TCVf vs If 125 oC DELTA 1 10 100 1000 Pt - PULSE TIME - (ms) .01 THERMAL IMPEDANCE - (C/W) TYPICAL THERMAL IMPEDANCE With Heatsink No Heatsink 1 102 3 4 5 6 7 8 If NEEDED TO OBTAIN AN IM3 OF - 60 dBc (mA) POWER LEVEL/TONE (dBm) IP3 (dBm) TYPICAL POWER LEVEL vs FORWARD BIAS CURRENT 500KHz 250KHz 150KHz TAU = 0.1 ms f1 = F +/- 1 KHz f2 = F +/- 1 KHz

MSCOXXXA 12-14-98 DSW UM2300 <->(34989) UM2300 SERIES UM2300

MSCOXXXA 12-14-98 DSW UM2300 <->(34989) UM2300 SERIES UM2300S