UGF12JT VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Plastic package has Underwriters Laboratories Flammability Classification 94V-0
  • Ideally suited for freewheeling diode and power factor correction applications
  • Soft recovery characteristics
  • Excellent high temperature switching
  • Optimized to reduce switching losses
  • Glass passivated chip junction Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals:Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering in accordance with CECC 802 / Reflow guaranteed Polarity:As marked Mounting Position:Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 g

UG12JT, UGF12JT, UGB12JT Series Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88758 2 30-Jul-02 Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol UG12HT UG12JT Unit Maximum repetitive peak reverse voltage V RRM 500 600 V Maximum working reverse voltage V RWM 400 480 V Maximum RMS voltage V RMS 350 420 V Maximum DC blocking voltage V DC 500 600 V Maximum average forward rectified current I F(AV) 12 A Peak forward surge current 8.3ms single half sine-waveIFSM 135 Asuperimposed on rated load (JEDEC Method) Operating junction and storage temperature range TJ, TSTG –55 to +150 °C RMS Isolation voltage (UGF types only) 4500(1) from terminals to heatsink with t = 1.0 second, RH ≤ 30% VISOL 3500(2) V 1500(3) Electrical Characteristics(TC = 25°C unless otherwise noted) Parameter Symbol UG12HT UG12JT Unit Maximum instantaneous I F = 12A, TJ = 25°C VF 1.75 Vforward voltage(4) IF = 12A, TJ = 125°C 1.50 TJ = 25°C 30 µA Maximum DC reverse current at VRWM TJ = 100°C I R 800 µA TJ = 125°C 4.0 mA Maximum reverse recovery time at IF = 0.5A, IR = 1.0A, Irr= 0.25A trr 30 ns Maximum reverse recovery time at trr 50 nsIF = 1.0A, di/dt = 50A/µs, VR = 30V, Irr = 0.1 IRM Typical softness factor (tb/ta) S 0.9 —IF = 12A, di/dt = 240A/µs, VR = 400V, Irr= 0.1 IRM Maximum reverse recovery current at IRM 7.5 AIF = 12A, di/dt = 96A/µs, VR = 400V, TC = 125°C Peak forward recovery time at tfr 500 nsIF = 12A, di/dt = 96A/µs, VF = 1.1V Thermal Characteristics(TC = 25°C unless otherwise noted) Parameter Symbol UG12 UGF12 UGB12 Unit Typical thermal resistance from junction to case R θJC 1.73 3.04 1.73 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle

Ordering Information

Product Case Package Code Package Option UG12HT & UG12JT TO-220AC 45 Anti-Static tube, 50/tube, 2K/carton UGF12HT & UGF12JT ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton 31 13” reel, 800/reel, 4.8K/carton UGB12HT & UGB12JT TO-263AB 45 Anti-Static tube, 50/tube, 2K/carton 81 Anti-Static 13” reel, 800/reel, 4.8K/carton

0 25 50 75 100 125 150 175 1 10 100 125 150 175 200 100 0.01 0.1 100 1 10 100 100 25 50 75 100 100 150 200 250 300 350 400 125 0 20 40 60 80 100 100 1,000 10,000 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles at 60 HZ Fig. 1 – Forward Current Derating Curve Average Forward Current (A) Case Temperature (¡C) Instantaneous Forward Voltage (V) Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg Fig. 4 – Typical Reverse Leakage Characteristics Per Leg Instantaneous Reverse Leakage Current (µA) Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Current (A) Junction Temperature (°C) Stored Charge / Reverse Recovery Time (nC/ns) Fig. 6 – Reverse Switching Characteristics Per Leg Reverse Voltage (V) Junction Capacitance (pF) Fig. 5 – Typical Junction Capacitance Per Leg TJ = 25°C TJ = 25°C TJ = 125°C TJ = 125°C TJ = 100°C TJ = 100°C trr Q rr UG12HT, UG12JT, UGB12HT, UGB12JT UGF12HT, UGF12JT 12A, 240A/µs, 400V 1A, 50A/µs, 30V 12A, 240A/µs, 400V 1A, 50A/µs, 30V UG12JT, UGF12JT, UGB12JT Series Vishay Semiconductors formerly General Semiconductor Document Number 88758 www.vishay.com 30-Jul-02 3 Ratings and Characteristic Curves(TA = 25°C unless otherwise noted)