BYQ28E-XXX_V01 VISHAY | Alldatasheet

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BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Revision: 05-Jun-2019 1 Document Number: 88549 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Ultrafast Rectifier DESIGN SUPPORT TOOLS AVAILABLE

FEATURES

  • Power pack
  • Glass passivated pellet chip junction
  • Ultrafast recovery times
  • Soft recovery characteristics
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for D 2PAK (TO-263AB package)
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package)
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3  (for ITO-220AB and D 2PAK (TO-263AB package))
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 100 V to 200 V IFSM 55 A trr 25 ns VF 0.895 V TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB) Circuit configuration Common cathode BYQ28E, UG10 BYQ28EF, UGF10 BYQ28EB, UGB10 CASE PIN 2PIN 1 PIN 3 TO-220AB PIN 1 PIN 2 K HEATSINK PIN 2PIN 1 PIN 3 ITO-220AB 1 2 3 K D2PAK (TO-263AB) 33DD3 D 3D Models MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT UNITBYQ28E-100 BYQ28E-150 BYQ28E-200 Maximum repetitive peak reverse voltage V RRM 100 150 200 V Working peak reverse voltage V RWM 100 150 200 V Maximum DC blocking voltage V DC 100 150 200 V Maximum average forward rectified current at TC = 100 °C total device IF(AV) 10 Aper diode 5.0 Peak forward surge current 8.3 ms single half sine-wave IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 μs I RSM 0.2 A Electrostatic discharge capacitor voltage, human body model: C = 250 pF, R = 1.5 k VC 8k V Operating junction and storage temperature range T J, TSTG -40 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V AC 1500 V

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Revision: 05-Jun-2019 2 Document Number: 88549 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (2) AEC-Q101 qualified, available in ITO-220AB and D2PAK (TO-263AB) package ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage per diode I F = 10 A TJ = 25 °C VF (1) 1.25 VIF = 5 A 1.10 TJ = 150 °C 0.895 Maximum reverse current per diode at working peak reverse voltage T J = 25 °C IR 10 μATJ = 100 °C 200 Maximum reverse recovery time per diode I F = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM trr 25 ns Maximum reverse recovery time per diode I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A t rr 20 ns Maximum stored charge per diode I F = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 9n C THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10 UGF10 UGB10 UNIT BYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient R JA 50 55 50 °C/W Typical thermal resistance per diode, junction to case R JC 4.5 6.7 4.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUAN TITY DELIVERY MODE TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube D 2PAK (TO-263AB) BYQ28EB-200-E3/45 1.77 45 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200-E3/81 1.77 81 800/reel Tape and reel ITO-220AB BYQ28EF-200HE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200HE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) BYQ28EB-200HE3_A/I (1) 1.95 I 800/reel Tape and reel

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Revision: 05-Jun-2019 3 Document Number: 88549 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 5 - Reverse Switching Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode 0 50 100 150 Average Forwar d Current (A) Case Temperature (°C) Resistive or Inductive Load 100 1 10010 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TC = 105 °C 8.3 ms Single Half Sine-Wave 100 0.1 0.01 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 125 °C TJ = 25 °C TJ = 100 °C Pulse Width = 300 μs 1 % Duty Cycle 100 1000 0.1 200 100 40 60 80 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Current (μA) TJ = 125 °C TJ = 25 °C TJ = 100 °C 25 50 75 100 125 Stored Charge/Reverse Recovery Time (nC/ns) Junction Temperature (°C) at 2 A, 20 A/μs at 5 A, 50 A/μs at 1 A, 100 A/μs at 1 A, 100 A/μs at 2 A, 20 A/μs trr Qrr at 5 A, 50 A/μs 100 100 0.1 1 10 Reverse Voltage (V) Junction Capacitanc e (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p

BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT www.vishay.com Vishay General Semiconductor Revision: 05-Jun-2019 4 Document Number: 88549 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSION in inches (millimeters) TO-220AB 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87)PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 13 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ITO-220AB 0.076 (1.93) REF. 45° REF. PIN 321 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.350 (8.89) 0.330 (8.38) D2PAK (TO-263AB) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.

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