BYT28 VISHAY | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
Features
- Plastic package has Underwriters Laboratories Flammability Classification 94V-0
- Ideally suited for free wheeling diode power factor correction applications
- Soft recovery characteristics
- Excellent high temperature switching
- Optimized to reduce switching losses
- High temperature soldering guaranteed: 250°C/10 seconds at terminals
- Glass passivated chip junction
BYT28, BYT28F, BYT28B, UG10GCT, UGF10GCT, UGB10GCTSeries Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88552 2 15-Apr-02 Maximum Ratings (TC = 25°C unless otherwise noted) UG10FCT UG10GCT Parameter Symbol BYT28-300 BYT28-400 Unit Maximum repetitive peak reverse voltage V RRM 300 400 V Maximum working reverse voltage V RWM 300 400 V Maximum RMS voltage V RMS 210 280 Maximum DC blocking voltage V DC 300 400 V Maximum average forward rectified total device IF(AV)
10 Acurrent at TC = 100°C per leg 5
Peak forward surge current 8.3ms single half sine-wave superimposed I FSM 60 A on rated load (JEDEC Method) per leg Operating junction and storage temperature range TJ, TSTG –40 to +150 °C RMS Isolation voltage (BYT28F , UGF types) 4500(1) from terminals to heatsink with t = 1 second, RH ≤ 30% VISOL 3500(2) V 1500(3) Electrical Characteristics(TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Maximum instantaneous forward voltage per leg(4) at IF = 5A, TJ = 25°C VF 1.30 Vat IF = 10A, TJ = 25°C 1.40 at IF = 5A, TJ = 150°C 1.05 Maximum reverse current per leg T J = 25°C 10 at VRRM TJ = 100°C IR 200 µA Maximum reverse recovery time per leg at IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 35 ns Maximum reverse recovery time per leg at IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr= 0.1IRM trr 50 ns Maximum reverse recovery current per leg at IRM 3.0 AIF = 5A, di/dt = 50A/µs, VR = 30V, TC = 100°C Maximum stored charge per leg IF = 2A, di/dt = 20A/µs, VR = 30V, Irr= 0.1IRM Q rr 50 nC Thermal Characteristics(TC = 25°C unless otherwise noted) UG10 UGF10 UGB10 Parameter Symbol BYT28 BYT28F BYT28B Unit Typical thermal resistance junction to case R Θ JC 4.5 6.7 4.5 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle
IF – Instantaneous Forward Current (A) 100 IR – Instantaneous Reverse Current (µA) Fig 4 — Typical Reverse Characteristics Per Leg 1.0 0.1 0.01 Fig 1 — Forward Current Derating Curve 0 50 100 150 Average Forward Current (A) Peak Forward Surge Current (A) Number of Cycles at 60 HZ Fig 2 — Maximum Non-Repetitive Peak Forward Surge Current Per Leg 100 11 0 100 Case Temperature (°C) 1.0 100 1000 0.1 TJ = 25°C TJ = 125°C TJ = 100°C Resistive or Inductive Load TJ = 25°C TJ = 125°C 11 0 100 100 0.1 Reverse Voltage (V) TJ = 125°C f = 1.0 MHZ Vsig = 50MVp-p Pulse Width = 300µs 1% Duty Cycle TC = 105°C 8.3ms Single Half Sine-Wave (JEDEC Method) Fig 5 — Reverse Switching Characteristics Per Leg 25 50 100 120 75 100 125 Stored Charge/Reverse Recovery Time (nC/ns) @5A, 50A/µs @2A, 20A/µs @2A, 20A/µs @1A, 100A/µs @5A, 50A/µs 20 10040 60 80 Percent of Rated Peak Reverse Voltage (%) Fig 6 — Typical Junction Capacitance Per Leg pF – Junction Capacitance Fig 3 —Typical Instantaneous Forward Characteristics Per Leg Instantaneous Forward Voltage (V) Junction Temperature (°C) trr Q rr TJ = 100°C BYT28, BYT28F, BYT28B, UG10GCT, UGF10GCT, UGB10GCTSeries Vishay Semiconductors formerly General Semiconductor Document Number 88552 www.vishay.com 15-Apr-02 3 Ratings and Characteristic Curves(TA = 25°C unless otherwise noted)