BYQ28E VISHAY | Alldatasheet

Document overview

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  • PDF pages: 3

Technical content

Features

  • Plastic package has Underwriters Laboratories Flammability Classification 94V-0
  • High reverse energy capability
  • Excellent high temperature switching
  • High temperature soldering guaranteed: 250°C/10 seconds at terminals
  • Glass passivated chip junction
  • Soft recovery characteristics Mechanical Data Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body Terminals:Plated leads, solderable per MIL-STD-750, Method 2026 Polarity:As marked Mounting Position:Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 g

BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88549 2 03-Jul-02 Maximum Ratings (TC = 25°C unless otherwise noted) UG10BCT UG10CCT UG10DCT Parameter Symbol BYQ28E-100 BYQ28E-150 BYQ28E-200 Unit Maximum repetitive peak reverse voltage V RRM 100 150 200 V Working peak reverse voltage V RWM 100 150 200 V Maximum DC blocking voltage V DC 100 150 200 V Maximum average forward rectified currentTotal device 10 at TC = 100°C Per leg IF(AV) 5 A Peak forward surge current 8.3ms single half sine-wave superimposed I FSM 55 A on rated load (JEDEC Method) per leg Repetitive peak reverse current per leg at tp = 100µsI RRM 0.2 A Electrostatic discharge capacitor voltage, Human body model: C = 250pF , R = 1.5kΩ VC 8K V Operating junction and storage temperature range TJ, TSTG –40 to +150 °C Non-repetitive peak reverse current per leg IRSM 0.2 Aat tp= 100µs RMS Isolation voltage (BYQ28EF , UGF types) 4500 (NOTE 1) from terminals to heatsink with t = 1 second, RH ≤ 30% V ISOL 3500 (NOTE 2) V 1500 (NOTE 3) Electrical Characteristics(TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Maximum instantaneous forward voltage per leg (Note 4) at IF = 10A, T J = 25°C 1.25 at IF = 5A, T J = 25°C V F 1.10 V at IF = 5A, T J = 150°C 0.895 Maximum reverse current per leg T J = 25°C 10 at working peak reverse voltage (Note 4) TJ = 100°C IR 200 µA Maximum reverse recovery time per leg at IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr= 0.1IRM trr 25 ns Maximum reverse recovery time per leg at IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 20 ns Maximum stored charge per leg IF = 2A, di/dt = 20A/µs, VR = 30V, Irr= 0.1IRM Q rr 9n C Thermal Characteristics(TC = 25°C unless otherwise noted) UG10 UGF10 UGB10 Parameter Symbol BYQ28E BYQ28EF BYQ28EB Unit Typical thermal resistance — junction to ambient R Θ JA 50 55 50 °C/W — junction to case R Θ JC 4.5 6.7 4.5 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300µs pulse width, 1% duty cycle

BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series Vishay Semiconductors formerly General Semiconductor Document Number 88549 www.vishay.com 03-Jul-02 3 Ratings and Characteristic Curves(TA = 25°C unless otherwise noted) IF – Instantaneous Forward Current (A) 100 IR – Instantaneous Reverse Current (mA) Typical Reverse Characteristics Per Leg 1.0 0.1 0.01 Forward Current Derating Curve 0 50 100 150 Average Forward Current (A) Peak Forward Surge Current (A) Number of Cycles at 60 HZ Maximum Non-Repetitive Peak Forward Surge Current Per Leg 100 11 0 100 Case Temperature (°C) 1.0 100 1000 0.1 TJ = 125°C 100°C 25°C Resistive or Inductive Load TJ = 25°C TJ = 125°C 11 0 100 100 0.1 Reverse Voltage (V) TJ = 125°C f = 1.0 MHZ Vsig = 50mVp-p Pulse Width = 300µs 1% Duty Cycle TC = 105°C 8.3ms Single Half Sine-Wave (JEDEC Method) TJ = 100°C Reverse Switching Characteristics Per Leg 25 50 75 100 125 Stored Charge/Reverse Recovery Time (nC/ns) @5A, 50A/µs @2A, 20A/µs @2A, 20A/µs @1A, 100A/µs @5A, 50A/µs 20 100 40 60 80 Percent of Rated Peak Reverse Voltage (%) Typical Junction Capacitance Per Leg pF – Junction Capacitance Typical Instantaneous Forward Characteristics Per Leg Instantaneous Forward Voltage (V) Junction Temperature (°C) @1A, 100A/µs trr Q rr