BYQ28E-100 VISHAY | Alldatasheet
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BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor Document Number: 88549 Revision: 07-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com www.vishay.com Dual Common Cathode Ultrafast Rectifier
FEATURES
- Glass passivated chip junction Ultrafast recovery times Soft recovery characteristics Low switching losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 5 A x 2 VRRM 100 V, 150 V, 200 V IFSM 55 A trr 25 ns VF 0.895 V TJ max. 150 °C BYQ28E & UG10 BYQ28EF & UGF10 BYQ28EB & UGB10 CASE PIN 2PIN 1 PIN 3 TO-220AB PIN 1 PIN 2 K HEATSINK K PIN 2PIN 1 PIN 3 ITO-220AB TO-263AB 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT UNIT BYQ28E-100 BYQ28E-150 BYQ28E-200 Maximum repetitive peak reverse voltage V RRM 100 150 200 V Working peak reverse voltage V RWM 100 150 200 V Maximum DC blocking voltage V DC 100 150 200 V Maximum average forward rectified current at TC = 100 °C total device per diode IF(AV) 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 55 A Non-repetitive peak reverse current per diode at tp = 100 µs I RSM 0.2 A Electrostatic discharge capacitor voltage, human body model: C = 250 pF , R = 1.5 kΩ VC 8 kV Operating junction and storage temperature range T J, TSTG - 40 to + 150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com Document Number: 88549 Revision: 07-Jan-082 Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle Note: (1) Automotive grade AEC Q101 qualified ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage per diode (1) IF = 10 A IF = 5 A IF = 5 A TJ = 25 °C TJ = 25 °C TJ = 150 °C VF 1.25 1.10 0.895 V Maximum reverse current per diode at working peak reverse voltage TJ = 25 °C TJ = 100 °C IR 10 200 µA Maximum reverse recovery time per diode I F = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM t rr 25 ns Maximum reverse recovery time per diode I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A t rr 20 ns Maximum stored charge per diode I F = 2 A, dI/dt = 20 A/µs, VR = 30 V, Irr = 0.1 IRM Q rr 9n C THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG10 UGF10 UGB10 UNIT BYQ28E BYQ28EF BYQ28EB Typical thermal resistance per diode, junction to ambient R θJA 50 55 50 °C/W Typical thermal resistance per diode, junction to case R θJC 4.5 6.7 4.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube TO-263AB BYQ28EB-200-E3/45 1.77 45 50/tube Tube TO-263AB BYQ28EB-200-E3/81 1.77 81 800/reel Tape reel TO-220AB BYQ28E-200HE3/45 (1) 1.80 45 50/tube Tube ITO-220AB BYQ28EF-200HE3/45 (1) 1.95 45 50/tube Tube TO-263AB BYQ28EB-200HE3/45 (1) 1.77 45 50/tube Tube TO-263AB BYQ28EB-200HE3/81 (1) 1.77 81 800/reel Tape reel
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com Document Number: 88549 Revision: 07-Jan-084 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) MAX. 0.635 (16.13) 0.625 (15.87)PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 32 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ITO-220AB 0.076 (1.93) REF. 45° REF. PIN 321 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7° REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.350 (8.89) 0.330 (8.38) TO-263AB Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) MIN. 0.33 (8.38) MIN. 0.42 (10.66) MIN. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.
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