UGF1004G THINKISEMI | Alldatasheet

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Features

/hexstar2 Low forward voltage drop /hexstar2 Ultra fast soft recovery switching for high efficiency /hexstar2 High current capability /hexstar2 Case: ITO-220AB full plastic isolated package /hexstar2 High surge current capability /hexstar2 Weight: 1.75 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant UGF1004G thru UGF1008G Pb Free Plating Product UGF1004G/UGF1005G/UGF1006G/UGF1007G/UGF1008G

10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.08T ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "GA" Suffix "GD" Suffix "GS"Suffix "G" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) V RRM V V RMS V V DC V I F(AV) A t rr ns R θJC °C/W T J T STG 1.70 Maximum DC blocking voltage Maximum average forward rectified current 10 Maximum repetitive peak reverse voltage Maximum reverse recovery time (Note 2) 280 350 420 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) Maximum reverse current @ rated V R T J =25°C T J =125°C VMaximum instantaneous forward voltage (Note 1) I F = 5 A V F Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 70 A 0.95 1.25 - 55 to +150 - 55 to +175 - 55 to +150 μA100 I R 20 25 Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A 200 300 400 Typical thermal resistance 6.0 Operating junction temperature range Storage temperature range - 55 to +175 500 600 UNIT UGF1005G UGF1006G UGF1007G UGF1008G 500 600 210 PARAMETER SYMBOL UGF1004G 200 300 400 Maximum RMS voltage 140

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 AVERAGE FORWARD CURRENT (A) CASE TEMPERATURE ( FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK UGF1007G/UGF1008G UGF1004G/UGF1005G/UGF1006G 100 1 10 100 PEAK FORWARD SURGE CURRENT(A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.001 0.01 0.1 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS T J =125°C T J =25°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS T J =25°C T J =125°C UGF1004G UGF1005G/UGF1006G UGF1007G/UGF1008G 100 1000 0.1 1 10 100 CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p UGF1004G thru UGF1008G