UG8XCT VISHAY | Alldatasheet

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UG8xCT, UGF8xCT, UGB8xCT www.vishay.com Vishay General Semiconductor Revision: 24-Feb-16 1 Document Number: 88766 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual Common Cathode Ultrafast Plastic Rectifier

FEATURES

  • Power pack
  • Glass passivated pellet chip junction
  • Ultrafast recovery time
  • Soft recovery characteristics
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-ST D-020, LF maximum peak of 245 °C (for TO-263AB package)
  • Solder dip 275 °C max., 10 s per JESD 22-B106 (for TO-220AB and ITO-220AB package)
  • AEC-Q101 qualified
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high voltage and high frequency power factor corrector, freewheeling diodes and secondary DC/DC rectification application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94V-0 flammab ility rating Base P/N-E3 - RoHS-co mpliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 2 x 4.0 A VRRM 500 V to 600 V IFSM 65 A trr 25 ns VF at IF = 4 A 1.50 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode CASE PIN 2PIN 1 PIN 3 TO-220AB UG8xCT Series ITO-220AB UGB8xCT Series PIN 1 PIN 2 K HEATSINK K UGF8xCT Series PIN 2PIN 1 PIN 3 TO-263AB 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8HCT UG8JCT UNIT Max. repetitive peak reverse voltage V RRM 500 600 V Max. working reverse voltage V RWM 400 480 V Max. RMS voltage V RMS 350 420 V Max. DC blocking voltage V DC 500 600 V Max. average forward rectified current I F(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 65 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V

UG8xCT, UGF8xCT, UGB8xCT www.vishay.com Vishay General Semiconductor Revision: 24-Feb-16 2 Document Number: 88766 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) AEC-Q101 qualified ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG8HCT UG8JCT UNIT Max. instantaneous forward voltage per diode (1) IF = 4 A T J = 25 °C VF 1.75 V IF = 4 A T J = 125 °C 1.50 Max. DC reverse current per diode at VRWM TJ = 25 °C IR 30 μA TJ = 100 °C 800 μA TJ = 125 C 4 mA Max. reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns Max. reverse recovery time per diode IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM trr 50 ns Typical softness factor (tb/ta) IF = 4.0 A, dI/dt = 240 A/μs, VR = 400 V, Irr = 0.1 IRM S 0.9 - Max. reverse recovery current per diode IF = 4.0 A, dI/dt = 32 A/μs, VR = 400 V, TC = 125 °C IRM 3.0 A Max. reverse recovery current per diode IF = 4.0 A, dI/dt = 240 A/μs, VR = 400 V, TC = 125 °C IRM 8.0 A Peak forward recovery time per diode IF = 4.0 A, dI/dt = 64 A/μs, VF = 1.1 VF max. tfr 500 ns THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8 UGF8 UGB8 UNIT Typical thermal resistance from junction to case per diode R ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UG8JCT-E3/45 1.85 45 50/tube Tube ITO-220AB UGF8JCT-E3/45 2.00 45 50/tube Tube TO-263AB UGB8JCT-E3/45 1.35 45 50/tube Tube TO-263AB UGB8JCT-E3/81 1.35 81 800/reel Tape and reel TO-220AB UG8JCTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB UGF8JCTHE3/45 (1) 2.00 45 50/tube Tube TO-263AB UGB8JCTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB UGB8JCTHE3/81 (1) 1.35 81 800/reel Tape and reel

UG8xCT, UGF8xCT, UGB8xCT www.vishay.com Vishay General Semiconductor Revision: 24-Feb-16 3 Document Number: 88766 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Reverse Switching Characteristics Per Diode 25 50 75 100 125 150 Average Forward Rectified Current (A) Case Temperature (°C) UG8JCT, UGB8JCT UGF8JCT Copper Pad 1 100 10 100 Number of Cycles at 60 Hz Peak Forward Surge Current (A) Instantaneous Forward Voltage (V) 0.01 0.1 100 Instantaneous Forward Current (A) TJ = 25 °C max. Pulse Width = 300 µs 1 % Duty Cycle 6040200 100 80 100 1000 10 000 TJ = 100 °C TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (µA) Reverse Voltage (V) Junction Capacitance (pF) 101 100 100 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 120 140 100 25 50 75 100 125 150 Stored Charge/Reverse Recovery Time (nC/ns) Qrr Trr IF = 4 A VR = 30 V dI/dt = 240 A/µs

60 A/µs

50 A/µs 50 A/µs

240 A/µs

Junction Temperature (°C)

UG8xCT, UGF8xCT, UGB8xCT www.vishay.com Vishay General Semiconductor Revision: 24-Feb-16 4 Document Number: 88766 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) MAX. 0.635 (16.13) 0.625 (15.87)PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 32 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ITO-220AB 0.076 (1.93) REF. 45° REF. PIN 321 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4.85) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) 7° REF. 7° REF. 0.140 (3.56) DIA. 0.330 (8.38) TO-263AB Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) MIN. 0.33 (8.38) MIN. 0.42 (10.66) MIN. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.

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