UGB8BT

UGB8AT_12 DIOTEC | Alldatasheet

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UGB8AT ... UGB8JT UGB8AT ... UGB8JT Superfast Efficient Rectifiers – Single Diode Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode Version 2012-10-09 Dimensions - Maße [mm] Nominal current Nennstrom 8 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...600 V Plastic case Kunststoffgehäuse TO-263AB D2 PAK (D2) Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A UGB8AT 50 50 < 0.9 < 1.0 UGB8BT 100 100 < 0.9 < 1.0 UGB8DT 200 200 < 0.9 < 1.0 UGB8GT 400 400 < 1.15 < 1.25 UGB8JT 600 600 < 1.6 < 1.75 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 8 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 22 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 112/125 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 62 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C

1 Tj = 25°C

2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 Type Typ 1 2 3 K 10.25 ±0.5

UGB8AT ... UGB8JT Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit Reverse recovery time Sperrverzugszeit Tj = 25°C trr [ns] 1) trr [ns] 2) UGB8AT ... UGB8DT < 25 < 35 UGB8GT ... UGB8JT < 35 < 45 Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 5 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1 IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2 IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) T = 25°Cj T = 125°Cj 200a-(5a-0.95v)