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UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor Revision: 24-Jun-2019 1 Document Number: 88767 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Voltage Ultrafast Rectifier DESIGN SUPPORT TOOLS AVAILABLE

FEATURES

  • Power pack
  • Glass passivated chip junction
  • Ultrafast recovery time
  • Soft recovery characteristics
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-ST D-020, LF maximum peak of 245 °C (for D 2PAK (TO-263AB package))
  • Solder dip 275 °C max. , 10 s per JESD 22-B106 (for TO-220AC and ITO-220AC package)
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3  (for ITO-220AC and D2PAK (TO-263AB package))
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high voltage and high frequency power factor correction application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Molding compound meets UL 94V-0 flammab ility rating Base P/N-E3 - RoHS-co mpliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 500 V to 600 V IFSM 100 A trr 25 ns tfr 500 ns VF at IF = 8 A 1.5 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D 2PAK (TO-263AB) Circuit configuration Single CASEPIN 2 PIN 1 TO-220AC UG8xT ITO-220AC UGF8xT UGB8xT PIN 1 PIN 2 K HEATSINK K PIN 2 PIN 1 D2PAK (TO-263AB) 33DD3 D 3D Models MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8HT UG8JT UNIT Max. repetitive peak reverse voltage V RRM 500 600 V Max. working reverse voltage V RWM 400 480 V Max. RMS voltage V RMS 350 420 V Max. DC blocking voltage V DC 500 600 V Max. average forward rectified current I F(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min V AC 1500 V

UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor Revision: 24-Jun-2019 2 Document Number: 88767 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) AEC-Q101 qualified available in ITO-220 and D2PAK (TO-263AB) package ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UG8HT UG8JT UNIT Max. instantaneous forward voltage (1) IF = 8 A T J = 25 °C VF 1.75 V IF = 8 A T J = 125 °C 1.50 Max. DC reverse current at VRWM TJ = 25 °C IR 30 μA TJ = 100 °C 800 μA TJ = 125 °C 4.0 mA Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A t rr 25 ns IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM t rr 50 ns Typical softness factor (tb/ta) I F = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, Irr = 0.1 IRM S 1.0 - Max. reverse recovery current IF = 8.0 A, dI/dt = 64 A/μs, VR = 400 V, TC = 125 °C I RM 5.5 A IF = 8.0 A, dI/dt = 240 A/μs, VR = 400 V, TC = 125 °C I RM 10 A Peak forward recovery time I F = 8.0 A, dI/dt = 64 A/μs, VF = 1.1 x VF max. tfr 500 ns THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL UG8 UGF UGB8 UNIT Typical thermal resistance from junction to case R ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PAC KAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC UG8JT-E3/45 1.80 45 50/tube Tube ITO-220AC UGF8JT-E3/45 1.95 45 50/tube Tube D 2PAK (TO-263AB) UGB8JT-E3/45 1.33 45 50/tube Tube D2PAK (TO-263AB) UGB8JT-E3/81 1. 33 81 800/reel Tape and reel ITO-220AC UGF8JTHE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) UGB8JTHE3_A/P (1) 1.33 P 50/tube Tube D2PAK (TO-263AB) UGB8JTHE3_A/I (1) 1.33 I 800/reel Tape and reel

UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor Revision: 24-Jun-2019 3 Document Number: 88767 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTCS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Reverse Switching Characteristics 25 50 75 100 125 150 175 Average Forward Rectified Current (A) Case Temperature (°C) Resistive or Inductive Load UG8F UG8, UGB8 100 1000 1 100 10 Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz Instantaneous Forward Voltage (V) 0.01 0.1 100 Instantaneous Forward Current (A) TJ = 25 °C max. Pulse Width = 300 µs 1 % Duty Cycle 6040200 100 80 100 1000 10 000 TJ = 100 °C TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (µA) Reverse Voltage (V) Junction Capacitance (pF) 10.1 10 100 100 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 300 350 250 150 200 100 25 50 75 100 125 150 Stored Charge/Reverse Recovery Time (nC/ns) Qrr Trr IF = 8.0 A Vr =3 0V

50 A/µs

240 A/µs

60 A/µs

Junction Capacitance (°C)

UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor Revision: 24-Jun-2019 4 Document Number: 88767 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC CASEPIN 2 PIN 1 0.635 (16.13) 0.625 (15.87) 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) PIN 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.145 (3.68) 0.135 (3.43) 0.603 (15.32) 0.573 (14.55) 0.055 (1.39) 0.045 (1.14) 0.185 (4.70) 0.175 (4.44) ITO-220AC PIN 1 2 0.025 (0.64) 0.015 (0.38) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.671 (17.04) 0.651 (16.54) 0.028 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7° REF. 7° REF. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.110 (2.79) 0.100 (2.54) 0.190 (4.83) 0.170 (4.32) D2PAK (TO-263AB) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) MIN. 0.15 (3.81) min. 0.33 (8.38) min. 0.42 (10.66) min. K K 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN.

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