UG4A-M3 VISHAY | Alldatasheet

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UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-16 1 Document Number: 89431 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Ultrafast Plastic Rectifiers

FEATURES

  • Glass passivated pellet chip junction
  • Ultrafast reverse recovery time
  • Low forward voltage drop
  • Low switching losses, high efficiency
  • High forward surge capability
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 50 V, 100 V, 150 V, 200 V IFSM 150 A trr 20 ns VF 0.95 V TJ max. 150 °C Package DO-201AD Diode variations Single die DO-201AD MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG4A UG4B UG4C UG4D UNIT Maximum repetitive peak reverse voltage V RRM 50 100 150 200 V Maximum RMS voltage V RMS 35 70 105 140 V Maximum DC blocking voltage V DC 50 100 150 200 V Maximum average forward rectified current (fig. 1) I F(AV) 4.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage I F = 4.0 A V F (1) 0.95 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 5.0 μATA = 100 °C 300 Maximum reverse recovery time I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A t rr 20 ns Typical reverse recovery time IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,  Irr = 10 % IRM TJ = 25 °C trr 30 nsTJ = 100 °C 50 Typical stored charge IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,  Irr = 10 % IRM TJ = 25 °C Qrr 15 nCTJ = 100 °C 30 Typical junction capacitance 4.0 V, 1 MHz C J 20 pF

UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-16 2 Document Number: 89431 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curves Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UG4A UG4B UG4C UG4D UNIT Typical thermal resistance R JA (1) 25 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PA CKAGE CODE BASE QUANTITY DELIVERY MODE UG4D-M3/54 1.138 54 1400 13" diam eter paper tape and reel UG4D-M3/73 1.138 73 1000 Ammo pack packaging 0 25 50 75 100 125 150 175 1.0 2.0 3.0 4.0 5.0 6.0 Average Forwar d Rectified Current (A) Temperature (°C) TA, Ambient Temperature P.C.B. Mounted 0.47" x 0.47" (12 mm x 12 mm) Copper Pads Resistive or Inductive Load 0.375" (9.5 mm) Lead Length TL Lead Temperature 1 10 100 100 1000 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TL = 75 °C 8.3 ms Single Half Sine-Wave 0.01 0.1 100 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 25 °C TJ = 100 °C Pulse Width = 300 μs 1 % Duty Cycle 0 20 40 60 80 100 0.01 0.1 100 1000 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Leakage Current (μA) TJ = 25 °C TJ = 100 °C

UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-16 3 Document Number: 89431 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Reverse Switching Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0 25 50 75 100 125 150 175 Junction Temperature (°C) Recovered Stored Change/Reverse Recovery Time, nC/ns IF = 4.0 A VR = 30 V dI/dt = 150 A/μs dI/dt = 100 A/μs dI/dt = 20 A/μs dI/dt = 50 A/μs trr Qrr dI/dt = 150 A/μs dI/dt = 100 A/μs dI/dt = 20 A/μs dI/dt = 50 A/μs 0.1 1 10 100 100 Reverse Voltage (V) Junction Capacit ance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2)

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