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UNISONIC TECHNOLOGIES CO., LTD UG1N120 Preliminary Insulated Gate Bipolar Transistor www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R207-028.a 5.3A, 1200V NPT SERIES N-CHANNEL IGBT DESCRIPTION The UTC UG1N120 is a NPT series N-Channel IGBT , it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, etc. The UTC UG1N120 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors , etc. FEATURES * Low conduction loss * Short circuit rating SYMBOL Gate Emitter Collector TO-220 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UG1N120L-TA3-T UG1N120G-TA3-T TO-220 G C E Tube Note: Pin Assignment: G: Gate C: Collector E: Emitte r UG1N120L-TA3-T (1)Packing Type (2)Package Type (1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free and Lead Free(3)Green Package MARKING UTC UG 1 N120 L: Lead Free G: Halogen Free Data CodeLot Code
UG1N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R207-028.a ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Voltage BVCES 1200 V Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Collector Current Continuous TC=25°C IC 5.3 A TC=110°C 2.7 A Collector Current Pulsed (Note 1) ICM 6 A Power Dissipation Total at TC=25°C PD 60 W Power Dissipation Derating TC>25°C 0.476 W/°C Forward Voltage Avalanche Energy (Note 2) EAV 10 mJ Short Circuit Withstand Time (Note 3) at VGE=15V tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE=12V tSC 13 µs Operating Junction Temperature Range TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. ICE=7A, L=400µH, VGE=15V, TJ=25°C. 4. VCE(PK)=840V, TJ=125°C, RG=82Ω. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 2.1 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BVCES IC=250µA, VGE=0V 1200 V Emitter to Collector Breakdown Voltage BVECS IC=10mA, VGE=0V 15 V Collector to Emitter Leakage Current ICES VCE=1200V TC=25°C 250 µA TC=125°C 20 µA TC=150°C 1.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC=1.0A, VGE=15V TC=25°C 2.5 2.9 V TC=150°C 3.8 4.3 V Gate to Emitter Threshold Voltage VGE(TH) IC=50µA, VCE=VGE 6.0 7.1 V Gate to Emitter Leakage Current IGES VGE=±20V ±250 nA Switching SOA SSOA TJ=150°C, RG=82Ω, VGE=15V, L=2mH, VCE(PK)=1200V 6 A Gate to Emitter Plateau Voltage VGEP IC=1.0A, VCE=600V 9.2 V On-State Gate Charge QG(ON) IC=1.0A, VCE=600V VGE=15V 14 20 nC VGE=20V 15 21 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ=25°C ICE=1.0A, VCE=30V, VGE=15V, RG=82Ω 200 ns Current Rise Time trl 470 ns Current Turn-Off Delay Time td(OFF)I 118 ns Current Fall Time tfl 200 ns
UG1N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R207-028.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.