UG1501 ZSELEC | Alldatasheet
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.5A G LASS PASSIVATED ULTRAFAST DIODE 1 of 2 Feat ures Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e ch a n i c a l D a t a C ! C as e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number M aximum Ratings and Electrical Characteristics @TA=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR 100 200 300 400 600 800 1000 V RMS Reverse Voltage VR( RMS) 35 70 140 210 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ T A = 55°C IO 1.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 50 A Forward Voltage @I F = 1.5A V FM 1. 0 1.3 1.7 V Peak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 100°C IRM 2.0 100 µA Reverse Recovery Time (Note 2) trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 60 40 pF Operat ing Temperature Range Tj -55 t o +150 °C S torage Temperature Range TST G -55 t o +150 °C Not e: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case Glass Passivated Die Construction ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-15 Dim M in Max A 24.5 — B 5.50 7. C 0.60 0. D 2.60 3. A ll Dimensions in mm UG1501 – UG1508 UG1501 – UG1508 UG1508UG1501 UG1502 UG1503 UG1504 UG1505 UG1506 UG1507
/G01/G01 0.01 1.0 2.0 0.6 0.8 1.0 1.2 1.4 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 Cj ° Pulse width = 300 sm 50V DC Approx
50 NI (Non-inductive)W 10 NIW
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise T ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig.
5 Reverse Recovery Time Characteristic and Test Circuit
(+) (+) (-) (-) Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 200 I , AVERAGE FWD RECTIFIED CURRENT (A)(A T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° Single phase half-wave
60 Hz resistive or inductive load
C , CAPACITANCE (pF)j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current UG1501 – UG1508 UG1501-UG1504 UG1506-UG1508 UG1505 UG1001-UG1005 UG1006-UG1008 UG1501 – UG1508