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UNISONIC TECHNOLOGIES CO., LTD UG10N120 Preliminary Insulated Gate Bipolar Transistor www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R207-027.a 35A, 1200V NPT SERIES N-CHANNEL IGBT  DESCRIPTION The UTC UG10N120 is a NPT series N-Channel IGBT, it uses UTC’s advanced technology to pr ovide the customers with a minimum on-state resistance, etc. The UTC UG10N120 is suitable for AC and DC motor controls, power supplies, and drivers for solenoids, relays and contactors, etc.  FEATURES * Low conduction loss * Short circuit rating  SYMBOL Gate Emitter Collector  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UG10N120L-TA3-T UG10N120G-TA3-T TO-220 G C E Tube Note: Pin Assignment: G: Gate C: Collector E: Emitter UG10N120L-TA3-T (1)Packing Type (2)Package Type (1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free(3)Green Package  MARKING

UG10N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 7 - 0 2 7 . a  ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Voltage V CES 1200 V Gate-Emitter Voltage V GES ±20 V Gate to Emitter Voltage Pulsed V GEM ±30 V Collector Current Continuous TC=25°C IC 35 A TC=110°C 17 A Collector Current Pulsed (Note 1) I CM 80 A Power Dissipation Total at TC = 25°C PD 298 W Power Dissipation Derating TC > 25°C 2.38 W/°C Forward Voltage Avalanche Energy (Note 2) E AV 80 mJ Short Circuit Withstand Time (Note 3) at VGE=15V t SC 8 µs Short Circuit Withstand Time (Note 3) at VGE=12V t SC 15 µs Operating Junction Temperature Range T J -55~+150 °C Storage Temperature Range T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those val ues beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. I CE=20A, L=400µH, TJ=25°C. 4. VCE(PK)=840V, TJ=125°C, RG=10Ω.  THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 0.42 °C/W  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BV CES I C=250µA, VGE=0V 1200 V Emitter to Collector Breakdown Voltage BV ECS I C=10mA, VGE=0V 15 V Collector to Emitter Leakage Current I CES V CE=1200V TC=25°C 250 µA TC=125°C 150 µA TC=150°C 2 mA Collector to Emitter Saturation Voltage V CE(SAT) I C=10A, VGE=15V TC=25°C 2.45 2.7 V TC=150°C 3.7 4.2 V Gate to Emitter Threshold Voltage V GE(TH) I C=90µA, VCE=VGE 6.0 6.8 V Gate to Emitter Leakage Current I GES V GE=±20V ±250 nA Switching SOA SSOA TJ=150°C, RG=10Ω, VGE=15V, L=400µH, VCE(PK)=1200V 55 A Gate to Emitter Plateau Voltage V GEP I C=10A, VCE=600V 10.4 V On-State Gate Charge Q G(ON) I C=10A, VCE=600V VGE=15V 100 120 nC VGE=20V 130 150 nC Current Turn-On Delay Time t d(ON)I IGBT and Diode at TJ=25°C ICE=1A, VCE=30V, VGE=15V, RG=10Ω 250 ns Current Rise Time t rl 400 ns Current Turn-Off Delay Time t d(OFF)I 275 ns Current Fall Time t fl 165 ns

UG10N120 Preliminary Insulated Gate Bipolar Transistor UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 7 - 0 2 7 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.