UG1001 DIODES | Alldatasheet

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C D DO-41 Dim Min Max A 25.40 /c190 B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25/c176C unless otherwise specified /c183Glass Passivated Die Construction /c183Diffused Junction /c183Ultra-Fast Switching for High Efficiency /c183High Current Capability and Low Forward Voltage Drop /c183Surge Overload Rating to 30A Peak /c183Low Reverse Leakage Current /c183Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data /c183Case: Molded Plastic /c183Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 /c183Polarity: Cathode Band /c183Marking: Type Number /c183Weight: 0.35 grams (approx.) /c183Mounting Position: Any Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol UG1001 UG1002 UG1003 UG1004 UG1005 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 V Average Rectified Output Current (Note 1) @ T A = 55/c176C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on Rated Load (JEDEC Method) I FSM 30 A Forward Voltage @ I F = 1.0A VFM 1.0 1.3 1.7 V Peak Reverse Current @ T A = 25/c176C at Rated DC Blocking Voltage @ T A = 100/c176C IRM 5.0 100 /c109A Reverse Recovery Time (Note 3) trr 50 75 ns Typical Junction Capacitance (Note 2) Cj 20 10 pF Typical Thermal Resistance Junction to Ambient R/c113JA 95 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 /c176C Notes: 1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Measured with I

DS27008 Rev. A1-2 2 of 2 UG1001 - UG1005 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I ,AVERAGE FWD RECTIFIED CURRENT (A) T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Deratin g Curve A ° Single phase half-wave 60 Hz resistive or inductive load 0.01 0.1 1.0 I,INST ANT ANEOUS FWD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F 1.6 1.8 2.0 UG1001 - UG1003 T = 25 Cj ° Pulse width = 300 sµ UG1004 UG1005 I ,PEAK FOR W ARD SURGE CURRENT (A) FSM 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Sur ge Current Pulse width = 8.3ms single half sine-wave (JEDEC Method) 50V DC Approx

50 NI (Non-inductive)Ω 10 NIΩ

1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Set time base for 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recover y Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1 10 100 C ,CAP ACIT ANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R T = 25 C f = 1.0MHz j ° UG1005 UG1001 - UG1004