UFZ44

UFZ44 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UFZ44 Preliminary Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-515.a

50 Amps, 60 Volts

„ DESCRIPTION The UTC UFZ44 is an N-channel mode Power MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance, superior switching performance, cost-effectiveness and ruggedizd device design. „ FEATURES * 50A, 60V, RDS(ON)=28mΩ @ VGS=10V * High Switching Speed * Improved dv/dt Capability „ SYMBOL 1.Gate 3.Source 2.Drain „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UFZ44L-TA3-T UFZ44G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V TC=25°C (Note 2) 50 A Continuous, VGS at 10V TC=100°C ID 36 A Drain Current Pulsed (Note 3) I DM 200 A Single Pulsed Avalanche Energy (Note 4) E AS 100 mJ Peak Diode Recovery dv/dt (Note 5) dv/dt 4.5 V/ns Power Dissipation T C=25°C P D 150 W Linear De-rating Factor 1.0 W/°C Junction Temperature T J 150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by the package, (die current = 51 A). 3. Repetitive rating; pulse width limi ted by maximum junction temperature. 4. V DD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A. 5. I SD ≤51 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to C a s e θJC 1.0 °C/W

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 60 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=1mA 0.060 V/°C VDS=60V, VGS=0V 25Drain-Source Leakage Current I DSS VDS=48V, VGS=0V, TJ=125°C 250 µA Forward V GS=+20V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-20V, -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=31A (Note 2) 0.028 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 1900 pF Output Capacitance C OSS 920 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 170 pF SWITCHING PARAMETERS Total Gate Charge Q G 67 nC Gate to Source Charge Q GS 18 nC Gate to Drain Charge Q GD VGS=10V, VDS=48V, ID=51A (Note 2) 25 nC Turn-ON Delay Time t D(ON) 14 ns Rise Time t R 110 ns Turn-OFF Delay Time t D(OFF) 45 ns Fall-Time t F VDD=30V, ID=51A, RG=9.1Ω, RD=0.55 Ω (Note 2) 92 ns Internal Drain Inductance L D 4.5 nH Internal Source Inductance L S Between lead, 6 mm (0.25") from package and center of die contact G (1) S (3) D (2) 7.5 nH SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 50 A Maximum Body-Diode Pulsed Current I SM MOSFET symbol showing the integral reverse p - n junction diode 200 A Drain-Source Diode Forward Voltage V SD I S=51A, VGS=0V, TJ=25°C(Note 2) 2.5 V Body Diode Reverse Recovery Time t RR 120 180 ns Body Diode Reverse Recovery Charge Q RR IF=51A, dI/dt=100A/µs, TJ=25°C 0.53 0.80 nC Forward Turn-On Time t ON Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes: 1. Repetitive Rating: Pulse widt h limited by maximum junction temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Peak Diode Recovery dv/dt Test Circuit & Waveforms Same Type as DUT ISD VGS L VGS (Driver ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Driver

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a

UFZ44 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw Q W - R 5 0 2 - 5 1 5 . a VER.a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.