UFZ34

UFZ34 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UFZ34 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-900.a 28A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFZ34 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UFZ34 is suitable for all commercial-industrial applications, etc. „ FEATURES * RDS(ON)<0.042Ω @VGS=10V, ID=17A * High switching speed * Low gate charge „ SYMBOL G (1) D (2) S (3) „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UFZ34L-TA3-T UFZ34G-TA3-T TO-220 G D S Tube UFZ34L-TM3-T UFZ34G-TM3-T TO-251 G D S Tube UFZ34L-TN3-R UFZ34G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UFZ34 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw VER.a „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous TC=25°C ID 28 A TC=100°C 20 A Pulsed (Note 1) I DM 112 A Avalanche Current (Note 1) I AR 17 A Avalanche Energy Single Pulsed (Note 2) E AS 97 mJ Repetitive (Note 1) E AR 6.8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns Power Dissipation T C=25°C P D 68 W Linear Derating Factor 0.46 W/°C Junction Temperature T J -55~+175 °C Storage Temperature Range T STG -55~+175 °C Note: Absolute maximum ratings are those values be yond which the device coul d be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62 °C/W Junction to C a s e θJC 3.3 °C/W Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=670µH, I AS=17A, RG=25Ω, Starting TJ=25°C. 3. I SD≤17A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ≤175°C.

UFZ34 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 0 0 - . a „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 60 V Drain-Source Leakage Current I DSS V DS=60V, VGS=0V 25 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse V GS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance (Note 2) RDS(ON) V GS=10V, ID=17A 0.042 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 680 pF Output Capacitance C OSS 220 pF Reverse Transfer Capacitance C RSS 80 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=48V, ID=17A (Note 4) 30 nC Gate to Source Charge Q GS 6.7 nC Gate to Drain Charge Q GD 12 nC Turn-ON Delay Time t D(ON) VDD=30V, ID=17A, RG=13Ω, RD=1.8Ω (Note 2) 5.1 ns Rise Time t R 30 ns Turn-OFF Delay Time t D(OFF) 22 ns Fall-Time t F 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 28 A Maximum Body-Diode Pulsed Current (Note 1) ISM 100 A Drain-Source Diode Forward Voltage (Note 2) VSD T J=25°C, IS=17A, VGS=0V 1.3 V Body Diode Reverse Recovery Time t RR TJ=25°C, IF=17A, di/dt=100A/µs 63 95 ns Body Diode Reverse Recovery Charge (Note 2) QRR 130 200 nC Forward Turn-On Time t ON Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse width ≤300µs, Duty cycle≤2%.

UFZ34 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 0 0 - . a „ TEST CIRCUITS AND WAVEFORMS VGS DUT RG VDS RD Resistive Switching Test Circuit Resistive Switching Waveforms VDS VGS 90% 10% td(ON) tR tFtd(OFF) 10V tON tOFF

UFZ34 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 0 0 - . a „ TEST CIRCUITS AND WAVEFORMS VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

UFZ34 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 0 0 - . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.