UFR9120

UFR9120 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-570.a P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed „ FEATURES * Fully Avalanche Rated * High Switching Speed * extremely Low On-Resistance * Surface Mount „ SYMBOL „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UFR9120L-TN3-R UFR9120G-TN3-R TO-252 G D S Tape Reel UFR9120L-TN3-T UFR9120G-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UFR9120 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 7 0 . a „ ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GSS ±20 V TC=25°C -6.6 A Continuous TC=100°C ID -4.2 A Drain Current, VGS@-10V Pulsed (Note 2) I DM -26 A Avalanche Current (Note 2) I AR -6.6 A Single Pulsed (Note 3) E AS 100 mJ Avalanche Energy Repetitive (Note 2) E AR 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation TC=25°C 40 W Linear Derating Factor PD 0.32 W/°C Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Note: 1. Absolute maximum ratings are those valu es beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11) 3. Starting T J=25°C, L=13mH RG=25Ω, IAS=-3.9A (See Fig.12) 4. I SD ≤ -4.0A, di/dt ≤300A/μs,VDD ≤ V(BR)DSS, TJ ≤ 25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 3.1 °C/W Note: 1. For recommended footprint and soldering techniques refer to application note

UFR9120 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 7 0 . a „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V -100 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=-1mA -0.11 V/°C VDS=-100V, VGS=0V -25Drain-Source Leakage Current I DSS VDS=-80V, VGS=0V , TJ=150°C -250 µA Forward V GS=+20V +100 nAGate- Source Leakage Current Reverse IGSS VGS=-20V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-3.9A 0.48 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 350 pF Output Capacitance C OSS 110 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=-25V, f=1.0MHz 70 pF SWITCHING PARAMETERS Total Gate Charge Q G 27 nC Gate to Source Charge Q GS 5.0 nC Gate to Drain Charge Q GD VGS=-10V, VDS=-80V, ID=-4.0A (Note 1, 2) 15 nC Turn-ON Delay Time t D(ON) 14 ns Rise Time t R 47 ns Turn-OFF Delay Time t D(OFF) 28 ns Fall-Time t F VDD=-50V, ID= -4.0A, RG= 12Ω, RD=12Ω (Note 1, 2) 31 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S -6.6 A Maximum Body-Diode Pulsed Current (Note 1) ISM MOSFET symbol showing the integral reverse p-n junction diode -26 A Drain-Source Diode Forward Voltage V SD I S=-3.9A, VGS=0V, TJ =25°C -2.0 V Body Diode Reverse Recovery Time t RR 100 150 ns Body Diode Reverse Recovery Charge Q RR IF=-4.0A, VGS=0V, di/dt = 100A/µs, TJ =25°C (Note 1) 420 630 nC Notes: 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Essentially independent of operating temperature.

UFR9120 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 7 0 . a „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UFR9120 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 7 0 . a „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UFR9120 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 5 7 0 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.