UFP60C20S THINKISEMI | Alldatasheet
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Technical content
Features
※ Fast switchin g for hi g h efficienc y ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y ※ Low reverse leaka g e current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Open Metal Package TO-3PN/TO-3PB ※ E p ox y : UL 94V-0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 6.0 g ram a pp roximatel y MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UFP60C20S UNIT VRRM 200 400 600 V VRMS 140 280 420 V VDC 200 400 600 V IF(AV) A IFSM A IR μA μA Trr nS CJ pF RθJC °C/W TJ,TSTG °C Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 300 Typical Thermal Resistance (Note 3) 0.8 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) 25-50 PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Tc=100°C (Total Device 2x30A=60A) Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) 600 Maximum Instantaneous Forward Voltage @30A (Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25°C At Rated DC Blocking Voltage @TJ=125°C 1.0 5.0 Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "A" Suffix "D" Suffix "S"Suffix "C" UFP60C20S thru UFP60C60S Pb Free Plating Product UFP60C20S/UFP60C40S/UFP60C60S Pb
60 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.10T TO-3PN/TO-3PB Unit:inch(mm) ※ ThinkiSemi latest&matured process FRD/FRED UFP60C10S (Per Diode/Per Leg) Bottom Side Metal Heat Sink(Case) UFP60C40S UFP60C30S UFP60C60S UFP60C50S
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 300 0.1 0 50 100 150 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 120 240 360 480 600 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p UFP60C10S/UFP60C20S UFP60C30S/UFP60C40S UFP60C50S/UFP60C60S © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.10T UFP60C20S thru UFP60C60S
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.10T
Package Information
Symbol Dimensions(millimeters) Min. Max. A 4.60 5.00 A1 1.50 2.00 A2 2.20 2.60 b 0.80 1.20 b1 2.90 3.30 b2 1.90 2.30 c 0.40 0.80 e 5.25 5.65 E 15.3 15.7 E1 13.2 13.6 E2 13.1 13.5 E3 9.10 9.50 H 19.7 20.1 H1 19.1 20.1 H2 18.3 18.7 H3 2.80 3.20 G 4.80 5.20 ФP 3.00 3.40 TO-3PN/TO-3PB Package Outline UFP60C20S thru UFP60C60S