UFF160-02AT THINKISEMI | Alldatasheet
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Features
/hexstar2 Low forward voltage drop /hexstar2 /hexstar2 High current capability /hexstar2 Case: Fully Insulated TO-220FP FullPak Plastic /hexstar2 High surge current capability /hexstar2 Weight: 2.1 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant ITO-220AB Unit:mm UFF160-02AT thru UFF160-06AT Pb Free Plating Product UFF160-02AT thru UFF160-06AT © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Application /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Pb -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 16.0 5.0 175 0.98 250 2.2 UNIT V V V V A A uA uA o C pF o CW nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 o C Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 o C Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 o C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 150 200 400 1.3 1.7 Rev.05 UFF160-02AT UFF160-04AT UFF160-06AT
16 Ampere Dual Common Anode Ultra Fast Recovery Half Bridge Rectifier
Suffix "CT" Case Reverse Doubler Tandem Polarity Suffix "AT" Suffix "ST" Latest GPP technology with super fast recovery time Doubler Tandem Polarity Suffix "DT"
FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 0 50 100 150 CASE TEMPERATURE, o C FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 8.0 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE UFF160-04AT UFF160-02AT UFF160-06AT © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05 UFF160-02AT thru UFF160-06AT