UFB120FA20 IRF | Alldatasheet

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trr = 28ns IF(AV) = 120A @ TC = 90°C VR = 200V UFB120FA20 Bulletin PD-20487 12/01 Insulated Ultrafast Rectifier Module VR Cathode-to-Anode Voltage 200 V IF Continuous Forward Current, TC = 90°C Per Diode 60 A IFSM Single Pulse Forward Current, TC = 25°C Per Diode 850 PD Max. Power Dissipation, TC = 90°C Per Module 110 W VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V TJ, TSTG Operating Junction and Storage Temperatures - 55 to 150 °C Parameters Max Units Absolute Maximum Ratings

  • Two Fully Independent Diodes
  • Ceramic Fully Insulated Package (VISOL = 2500V AC)
  • Ultrafast Reverse Recovery
  • Ultrasoft Reverse Recovery Current Shape
  • Low Forward Voltage
  • Optimized for Power Conversion: Welding and Industrial SMPS Applications
  • Industry Standard Outline
  • Plug-in Compatible with other SOT-227 Packages
  • Easy to Assemble
  • Direct Mounting to Heatsink The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life- time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC- DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Case Styles UFB120FA20 SOT-227 www.irf.com 1 4

2 www.irf.com VBR Cathode Anode 200 - - V I R = 100µA Breakdown Voltage VFM Forward Voltage - 0.96 1.13 V I F = 60A - 0.79 0.90 V I F = 60A, TJ = 150°C IRM Reverse Leakage Current - - 100 µA V R = VR Rated - - 1.0 mA T J = 150°C, VR = VR Rated CT Junction Capacitance - 105 - pF V R = 200V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode Parameters Min Typ Max Units Test Conditions RthJC Junction to Case Single Diode Conducting - 0.8 1.1 K/W Both Diodes Conducting - 0.4 0.55 RthCS Case to Heat Sink, Flat, Greased Surface - 0.05 - Wt Weight - 30 - g T Mounting Torque - 1.3 - (N*m) Parameters Min Typ Max Units Thermal - Mechanical Characteristics trr Reverse Recovery Time - - 28 ns I F = 1.0A, diF/dt = 200A/µs, VR = 30V -3 2- T J = 25°C -6 4- T J = 125°C IRRM Peak Recovery Current - 4.0 - A T J = 25°C Qrr Reverse Recovery Charge - 64 - nC T J = 25°C - 263 - T J = 125°C Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode IF = 50A VR = 100V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions

3www.irf.com Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics (per diode) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (pF) Fig. 4 - Max. Thermal Impedance Z thJC (per diode) t 1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Reverse Current - I R (µA) 100 1000 0.2 0.6 1 1.4 1.8 Tj = 150˚C Tj = 125˚C Tj = 25˚C 0.01 0.1 0.001 0.01 0.1 1 10 Single Pulse (Thermal Impedance) PDM Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.001 0.01 0.1 100 0 50 100 150 200 125˚C 25˚C Tj = 150˚C 100 1000 1 10 100 1000 Tj = 25˚C

4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per diode) Fig. 6 - Forward Power Loss (per diode) (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR Average Power Loss ( Watts ) trr ( ns ) Qrr ( nC ) Average Forward Current - IF(AV) (A) Allowable Case Temperature (°C) Average Forward Current - IF(AV) (A) diF /dt (A/µs )diF /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dtFig. 7 - Typical Reverse Recovery time vs. di F /dt 100 110 120 130 140 150 0 1 02 03 04 05 06 07 0 DC Square wave (D = 0.50) 80% Rated Vr applied see note (3) 0 1 02 03 04 05 06 07 0 DC RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 100 1000 Tj = 125˚C Tj = 25˚C If = 50A Vrr = 200V 100 200 300 400 500 600 700 800 100 1000 Tj = 125˚C Tj = 25˚C If = 50A Vrr = 200V

5www.irf.com Fig. 10 - Reverse Recovery Waveform and DefinitionsFig. 9 - Reverse Recovery Parameter Test Circuit IRFP250 D.U.T. L = 70µH V = 200VR 0.01Ω G D S dif/dt ADJUST 4. Qrr - Area under curve defined by t rr and IRRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Q rr = t rr x I RRM ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt

0.75 IRRM

  1. Dimensioning & tolerancing per ANSI Y14.5M-1982. 2. Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). Notes: FRED LEAD ASSIGNMENTS

6 www.irf.com Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code 1 524 1 - ULTRAFAST RECTIFIER 2 - Ultrafast Pt diffused 3 - Current Rating (120 = 120A) 4 - Circuit Configuration (2 separate Diodes, parallel pin-out) 6 - Voltage Rating (20 = 200V) UF B 120 F A 20 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.