UF9640G-TN3-R

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-484.E

11 Amps, 200 Volts

 DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. T he device has an advantage of including fast switching, low on-resistance, ruggedized device design and low cost-effectiveness. This type of package is generally applied in applications in the commercial-industrial field especially suitable for the power consumption at approximately 50W. Because of its low package cost and low thermal resistance, this package is widely applied in the industry field.  FEATURES * Fast switching speed * P-channel MOSFET * Repetitive avalanche rated * Simple drive requirements * Ease of paralleling  SYMBOL

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-484.E  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF9640L-TA3-T UF9640G-TA3 -T TO-220 G D S Tube UF9640L-TF3-T UF9640G-TF3 -T TO-220F G D S Tube UF9640L-TN3-R UF9640G-TN3 -R TO-252 G D S Tape Reel UF9640L-TQ2-T UF9640G-TQ2 -T TO-263 G D S Tube UF9640L-TQ2-R UF9640G-TQ2 -R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-484.E

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-484.E  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage V GSS ±20 V Avalanche Current (Note 1) I AR -11 A Continuous I D -11 A Drain Current Pulsed (Note 1) I DM -44 A Single Pulsed (Note 2) E AS 700 mJ Avalanche Energy Repetitive (Note 1) E AR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt -5.0 V/ns TO-220/TO-263 73 TO-220F 38 Power Dissipation TO-252 PD W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL PATINGS UNIT TO-220/TO-220F TO-263 62.5 Junction-to-Ambient TO-252 θJA 110 °C/W TO-220/TO-263 1.71 TO-220F 3.31 Junction-to-Case TO-252 θJC 2.6 °C/W

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-484.E  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS V GS=0V, ID=-250µA -200 V Breakdown Voltage Temp. Coefficient ∆V(BR)DSS/∆TJ ID=-1mA, Referenced to 25°C -0.20 V/°C Drain-Source Leakage Current I DSS V DS=-200V, VGS=0V -100 µA Forward V GS=+20V +100 nAGate-Source Leakage Current Reverse IGSS VGS=-20V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-6.6A (Note 4) 0.50 Ω Forward Transconductance g FS V DS=-50V, ID=-6.6A (Note 4) 4.1 S DYNAMIC PARAMETERS Input Capacitance C ISS 1200 pF Output Capacitance C OSS 370 pF Reverse Transfer Capacitance C RSS 81 pF Internal Source Inductance L S VDS=-25V,VGS=0V,f=1.0MHz 7.5 nH SWITCHING PARAMETERS Total Gate Charge Q G 44 nC Gate-Source Charge Q GS 7.1 nC Gate-Drain Charge Q GD VDS=-160V, VGS=-10V, ID=-11A (Note4) 27 nC Turn-ON Delay Time t D(ON) 14 ns Turn-ON Rise Time t R 43 ns Turn-OFF Delay Time t D(OFF) 39 ns Turn-OFF Fall Time t F VDD=-100V,ID=-11A,RG=9.1Ω, RD=8.6Ω (Note 4) 38 ns Internal Drain Inductance L D Between lead, 6mm (0.25in.) from package and center of die contact 4.5 nH SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S -11 A Maximum Body-Diode Pulsed Current I SM -44 A Drain-Source Diode Forward Voltage V SD I S =-11A, VGS=0V, TJ=25°C -5.0 V Body Diode Reverse Recovery Time t RR 250 300 ns Body Diode Reverse Recovery Charge Q RR IF=-11A, TJ=25°C dI/dt=100A/μs (Note 4) 2.9 3.6 μC Forward Turn-On Time t ON Intrinsic turn-on time is neglegibal (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. VDD=-50V, Starting TJ=25°C, L=8.7mH, RG=25Ω, IAS=-11A 3. ISD ≤-11A, di/dt ≤150A/μs, VDD ≤BVDSS, Starting TJ=150°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-484.E  TEST CIRCUITS AND WAVEFORMS

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-484.E  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, -BVDSS (V) Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, -VTH (V) 23 5 4 100 150 200 250 300 0 50 200 250 300100 100 150 200 250 300 150 Drain Current, -ID (A) Drain Current, -ID (A) 10010-1 101 101 102 102 100 Notes: 1.TC=25°C 2.TJ=150°C 3.Single Pulse Operation in this Area is United by RDM Maximum Safe Operating Area Drain Current, -ID (A) Drain-Source Voltage, -VDS (V) 1ms 10ms 100µs

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-484.E UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.