UF9520S

UF9520S UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-892.a -6.8A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to pr ovide the customers with high switching speed and a minimum on-state resistance. The UTC UF9520S is suitable for high current applications, etc. „ FEATURES * RDS(ON)<0.6Ω @ VGS=-10V, ID=-4.1A * High switching speed * Dynamic dv/dt rating „ SYMBOL TO-220F1 „ RDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF9520SL-TF1-T UF9520SG-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source UF9520SL-TF1-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TF1: TO-220F1 (3) L: Lead Free, G: Halogen Free

UF9520S Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 9 2 . a „ ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous VGS=-10V, TC=25°C ID -6.8 A VGS=-10V, TC=100°C -4.8 A Pulsed (Note 2) I DM -27 A Avalanche Current (Note 2) I AR -6.8 A Avalanche Energy Single Pulse (Note 3) E AS 300 mJ Repetitive (Note 2) E AR 6.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.5 V/ns Power Dissipation T C=25°C PD 60 W Power Dissipation (PCB Mount) (Note 5) T A=25°C 3.7 W Linear Derating Factor 0.40 W/°C Linear Derating Factor (PCB Mount) (Note 5) 0.025 W/°C Junction Temperature T J -55~+175 °C Storage Temperature Range T STG -55~+175 °C „ THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Ambient (PCB Mount) (Note 5) 40 °C/W Junction to Case θJC 2.5 °C/W Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. VDD=-25V, starting TJ=25°C, L=9.7mH, RG=25Ω, IAS= -6.8A. 4. ISD≤-6.8A, di/dt≤110A/µs, VDD≤BVDSS, TJ≤175°C. 5. When mounted on 1” square PCB (FR-4 or G-10 Material) „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=-250µA, VGS=0V -100 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA -0.10 V/°C Drain-Source Leakage Current I DSS VDS=-100V, VGS=0V -100 µA VDS=-80V, VGS=0V, TJ=150°C -500 µA Gate-Source Leakage Current Forward IGSS VGS=-20V, VDS=0V -100 nA Reverse V GS=+20V, VDS=0V +100 nA ON CHARACTERISTICS Static Drain-Source On-State Resistance R DS(ON) V GS=-10V, ID=-4.1A (Note 2) 0.60 Ω Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V Forward Transconductance g FS V DS=-50V, ID=-4.1A (Note 2) 2.0 S DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=-25V, f=1.0MHz 390 pF Output Capacitance C OSS 170 pF Reverse Transfer Capacitance C RSS 45 pF

UF9520S Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 9 2 . a „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge Q G ID=-6.8A, V DS=-80V, V GS=-10V, (Note 2) 18 nC Gate to Source Charge Q GS 3.0 nC Gate to Drain ("Miller") Charge Q GD 9.0 nC Turn-ON Delay Time t D(ON) VDD=-50V, ID=-6.8A, RG=18Ω RD=7.1Ω (Note 2) 9.6 ns Rise Time t R 29 ns Turn-OFF Delay Time t D(OFF) 21 ns Fall Time t F 25 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous Source Current IS -6.8 A Maximum Body Diode Pulsed Current (Note 1) ISM -27 A Drain-Source Diode Forward Voltage V SD TJ=25°C, IS=-6.8A, VGS=0V (Note 2) -6.3 V Body Diode Reverse Recovery Time t RR TJ=25°C, IF=-6.8A, di/dt=100A/µs (Note 2) 98 200 ns Body Diode Reverse Recovery Charge Q RR 0.33 0.66 µC Forward Turn-On Time t ON Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive rating; pulse width limited by max. junction temperature. 2. Pulse width ≤300µs; duty cycle≤2%.

UF9520S Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 9 2 . a „ TEST CIRCUITS AND WAVEFORMS -10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

UF9520S Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 5 0 2 - 8 9 2 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.