UF800 YEASHIN | Alldatasheet

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Technical content

ULTRAFAST SWITCHING RECTIFIERS VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere

FEATURES

  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.
  • Exceeds environmental standards of MIL-S-19500/228
  • Low power loss, high efficiency.
  • Low forwrd voltge, high current capability
  • High surge capacity.
  • Ultra fast recovery times, high voltage. High temperature soldering : 260• O C / 10 seconds at terminals
  • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA
  • Case: TO-220AC full molded plastic package
  • Terminals: Lead solderable per MIL-STD-202, Method 208
  • Polarity: As marked.
  • Standard packaging: Any
  • Weight: 0.08 ounces, 2.24grams. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% UF800 UF80 UF802 UF803 UF804 UF806 UF808 UF8010 UNI TS M axi mum Recurrent Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V Max i mum RM S Voltage 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current at Tc=100°C 8.0 Peak Forward Surge Current, 8.3 ms single half sine -wave superimposed on rated load (JEDEC method) 125 A Maximum Instantaneous Forward Voltage at 8.0 A per element 1. 0 1.30 1.50 1.70 V Maximum DC Reverse Current (Note 1) Ta=25°C at Rated DC Blocking Voltage Ta=125°C 500 µA Typical Junction Capacitance (Note 1) 80 50 pF Maximum Reverse Recovery Time (Note 2) 50 75 ns Typical Thermal Resistance Note RθJC 15 Operating and Storage Temperature Range T J -55 to +150 NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC. 2. Reverse Recovery Test Conditions: I F =.5A, I R =1A, Irr=.25A. TO-220 AC Unit:inch(mm) .419(10.66)MAX .196(5.0) .163(4.16) .114(2.9).098(2.5) .025(0.65) MAX .139(3.55).MIN DIA 2 3 1 N I P .177(4.5).MAX .038(0.96) .019(.5) .100(2.54) .50(12.7)MAX A DATA SHEET UF800~UF8010 SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20110725 °C/W

RATINGAND CHARACTERISTICCURVES (+) 25Vdc (approx) (-) OSCILLOSCCOPE NOTE 1 1.Rise T ime=7ns m ax Input Impedance=1 m egohm. 2 2pF 2. R ise T ime=10ns m ax. Source I mpedance = 5 0 O hms Non inductive Noninductive Noninductive PULSE GENERA TOR NOTE 2 (-) (+) +0.5A -0.25 -1.0 SET TIME BASE FOR10ns/cm 1cm trr Fig. 2- FOR WARD CHARACTERISTICS NUMBER OF C YCLES AT 60Hz Fig.4-PEAK FOR WARD SURGECURRENT S E R E P M A , T N E R R U C E G R U S D R A W R O F Fig.3-FORWARD CURRENTDERA TING CURVE 1 10 100 NOTES: Fig.1-REVERSERECOVERY TIME CHARACTERISTIC AND TEST CIRCUITDIAGRAM 0.1 0.01 C D R A W R O F S U O E N A T S N I ) A ( , T N E R R U FORW ARD V OLTAGE , VOLTS T=25 CJ O 140 100 120 1.4 A K A E L E S R E V E R - R I T N E R R U C E G S E R E P M A O R C I M . %of PIV . VOLT S Fig.5- T YPICAL REVERS E CHARACT ERIS T ICS 1000 100 1.0 20 40 60 80 100 120 T = 25 CJ O T = 125 CJ O 1400.1 E G A R E V A R O F T N E R R U C D R A W CASE TEMPERATURE, C O 0 50 100 150 12.5 10.0 7.5 5.0 2.5 100 2.0 , E C N A T I C A P A C F p Fig.6-TYPICAL JUNCTION CAPACITANCE REVERSE VOLT AGE, VOLTS 1 2 5 10 20 50 100 200 160 120 240 200 500 T = 25 CJ O 600-800V 300-400V 50-200V UF800~UF8010 http://www.yeashin.com 2 REV.02 20110725