UF8010 UTC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

UNISONIC TECHNOLOGIES CO., LTD UF8010 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-348.a

80 Amps, 100 Volts

„ DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent R DS(ON), fast switching speed, low gate charge, and excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. „ FEATURES * RDS(ON) :12mΩ (Typ.) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective C OSS to simplify design „ SYMBOL „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF8010L-TA3-T UF8010G-TA3-T TO-220 G D S Tube

UF8010 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-348.a „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage V GS ±20 V Continuous Drain Current (VGS=10V,TC=25°C) I D 80 (Note 2) A Pulsed Drain Current I DM 320 A Single Pulse (Note 2,3) E AS 310 mJ Avalanche Energy Repetitive E AR 26 mJ Avalanche Current I AR 45 A Peak Diode Recovery dv/dt (Note 4) dv/dt 16 V/ns

260 W Power Dissipation (TC=25°C)

Derating above 25°C PD 1.8 W/°C Junction Temperature T J +175 °C Storage Temperature T STG -55 ~ + 175 °C Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 3. Starting T J = 25°C, L = 0.31mH, RG =25Ω, IAS = 45A. 4. I SD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 175°C „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 0.57 °C/W „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0 V, ID =250μA 100 V Drain-Source Leakage Current I DSS V DS=100V,VGS =0V 20 μA Gate-Source Forward Current V GS = 20 V 200 nA Gate-Source Reverse Current IGSS VGS = -20 V -200 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250μA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 45A (Note 1) 12 15 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3830 pF Output Capacitance C OSS 480 pF Reverse Transfer Capacitance C RSS VDS =25 V,VGS =0V, f =1.0MHz 59 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 15 ns Rise Time t R 130 ns Turn-Off Delay Time t D(OFF) 61 ns Fall Time t F VDD =50V,ID = 80A, RG = 39Ω VGS = 10V (Note 1) 120 ns Total Gate Charge Q G 81 120 nC Gate-Source Charge Q GS 22 nC Gate-Drain Charge Q GD VDS=80V, VGS=10V ID= 80A (Note 1) 26 nC

UF8010 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-348.a „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD IS=80 A ,VGS =0 V, TJ = 25°C (Note 1) 1.3 V Maximum Continuous Drain-Source Diode Forward Current IS 80 A Maximum Pulsed Drain-Source Diode Forward Current (Note 1,2) ISM 320 A Reverse Recovery Time t RR 99 150 ns Reverse Recovery Charge Q RR IF=80 A, V DD=50V, T J = 150 ℃ di/dt = 100 A/μs (Note 1) 460 700 nC Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ 2% 2. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.

UF8010 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-348.a „ TEST CIRCUITS AND WAVEFORMS RG D.U.T. 4- + - VDD * Reverse Polarity of D.U.T. for P-Channel

  • dv/dt controlled by RG
  • Driver same type as D.U.T
  • ISD controlled by Duty Factor “D”
  • D.U.T. – Device Under Test Circuit Layout Considerations
  • Low Stray Inductance
  • Ground Plane
  • Low Leakage Inductance Current Transformer Peak Diode Recovery dv/dt Test Circuit VDD ISDRipple≤5％ Inductor Current D.U.T. VDS Waveform Body Diode Forward Drop Body Diode Forward Current Diode Recovery dv/dt di/dt D.U.T. ISD Waveform Re-Applied Voltage Reverse Recovery Current P.W. Period Driver Gate Drive Period P.W.D= VGS=10V* * VGS = 5.0V for Logic Level Devices

UF8010 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-348.a „ TEST CIRCUITS AND WAVEFORMS(Cont.) D.U.T. VDD RD VDS VGS RG 10V Pulse Width≤1μs Duty Factor≤0.1% Switching Time Test Circuit VGS 10% 90% VDS td(on) tR tFtd(off) Switching Time Waveforms

UF8010 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-348.a UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.