UF740L-TQ2-R

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UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-966. A 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL TO-220 TO-220F TO-220F1 TO-220F2 TO-263  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF740L-TA3-T UF740G-TA3-T TO-220 G D S Tube UF740L-TF1-T UF740G-TF1-T TO-220F1 G D S Tube UF740L-TF2-T UF740G-TF2-T TO-220F2 G D S Tube UF740L-TF3-T UF740G-TF3-T TO-220F G D S Tube UF740L-TQ2-T UF740G-TQ2-T TO-263 G D S Tube UF740L-TQ2-R UF740G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 6 6 . A  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) V DGR 400 V Gate to Source Voltage V GS ±20 V Drain Current Continuous I D 10 A TC = 100°C I D 6.3 A Pulsed I DM 40 A Avalanche Energy Single Pulsed (Note 3) E AS 520 mJ Power Dissipation TO-220/TO-263 PD 125 W TO-220F/TO-220F1 44 TO-220F2 46 Derating above 25°C TO-220/TO-263 1.0 W/°C TO-220F/TO-220F1 0.35 TO-220F2 0.37 Junction Temperature T J +150 °C Operating Temperature T OPR -55 ~ +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-263 θJc 1.0 °C/W TO-220F/TO-220F1 2.86 TO-220F2 2.72

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 6 6 . A  ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BV DSS VGS = 0V, ID = 250μA 400 V Gate to Threshold Voltage V GS(THR) VGS = VDS, ID = 250μA 2.0 4.0 V On-State Drain Current (Note 1) I D(ON) V DS >ID(ON) x RDS(ON)MAX, VGS =10V 10 A Zero Gate Voltage Drain Current I DSS VDS = Rated BVDSS, VGS = 0V 25 μA VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C 250 μA Gate to Source Leakage Current I GSS V GS = ±20V ±500 nA Drain to Source On Resistance R DS(ON) VGS = 10V, ID = 5.2A (Note 1) 0.47 0.55 Ω Forward Transconductance g FS V DS ≥ 50V, ID = 5.2A (Note 1) 5.8 8.9 S Turn-On Delay Time t DLY(ON) VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature 45 55 ns Rise Time t R 65 75 ns Turn-Off Delay Time t DLY(OFF) 150 180 ns Fall Time t F 70 85 ns Total Gate Charge (Gate to Source + Gate to Drain) QG(TOT) VGS = 10V, ID = 10A, IG(REF) = 1.5mA, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature 100 120 nC Gate to Source Charge Q GS 10 nC Gate to Drain “Miller” Charge Q GD 20 nC Input Capacitance C ISS VGS = 0V, VDS =25V, f = 1.0MHz 1225 pF Output Capacitance C OSS 300 pF Reverse - Transfer Capacitance C RSS 80 pF Internal Drain Inductance L D Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances 3.5 nH Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die 4.5 nH Internal Source Inductance L S Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage V SD T J = 25°C, ISD = 10A, VGS = 0V (Note 1) 2.0 V Continuous Source to Drain Current I S Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode 10 A Pulse Source to Drain Current (Note 2) I SM 40 A Reverse Recovery Time t rr T J = 25°C, ISD = 10A, dISD/dt = 100A/μs 170 390 790 ns Reverse Recovery Charge Q RR T J = 25°C, ISD = 10A, dISD/dt = 100A/μs 1.6 4.5 8.2 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 6 6 . A  TEST CIRCUITS AND WAVEFORMS Switching Time Test Circuit tD(OFF) tF 90% 50%50%VGS VDS tD(ON) 90% tR 10% 10% Resistive Switching Waveforms D.U.T. RG VGS RL VDD tON PULSE WIDTH tOFF

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 6 6 . A  TYPICAL PERFORMANCE CUVES Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (A) Drain to Source Voltage, VDS (V) 4 6 10 Saturation Characteristics 820 Gate to Source Voltage, VSD (V) 2 8 10 Transfer Characteristics 0.1 100 Drain to Source Current, IDS (ON) (A) VGS=5.0V VGS=10V VGS=4.5V PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS=5.5V VGS=4.0V VGS=6.0V TJ = 25℃TJ = 150℃ PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V Normalized Drain to Source Breakdown Voltage Capacitance, C (pF)

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 9 6 6 . A  TYPICAL PERFORMANCE CUVES (Cont.) Transconductance, gFS (S) Source to Drain Current, ISD (A) Drain to Source on Resistance, RDS (ON) (Ω) Drain Current, ID (A) 10 40 50 Drain to Source on Resistance vs. Voltage and Drain Current 3020 VGS=10V VGS=20V Pulse Duration=80μs Duty Cycle = 0.5% Max Gate to Source Voltage, VGS (V) Gate Charge, QG (nC) 24 36 60 Gate to Source Voltage vs. Gate Charge 48120 VDS=200V VDS=320V VDS=80V ID=10A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.