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UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-078. G 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F TO-220F1 TO-220F2 TO-263  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF740L-TA3-T UF740G-TA3-T TO-220 G D S Tube UF740L-TF1-T UF740G-TF1-T TO-220F1 G D S Tube UF740L-TF2-T UF740G-TF2-T TO-220F2 G D S Tube UF740L-TF3-T UF740G-TF3-T TO-220F G D S Tube UF740L-TQ2-T UF740G-TQ2-T TO-263 G D S Tube UF740L-TQ2-R UF740G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) R: Tape Reel, T: Tube (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2, (2) TF3: TO-220F, TQ2: TO-263 (3) L: Lead Free, G: Halogen Free UF740L-TA3-T (1)Packing Type (2)Package Type (3)Lead Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-078. G  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) VDGR 400 V Gate to Source Voltage VGS ±20 V Drain Current Continuous ID 10 A TC = 100°C ID 6.3 A Pulsed IDM 40 A Avalanche Energy Single Pulsed (Note 3) EAS 520 mJ Power Dissipation TO-220/TO-263 PD 125 W TO-220F/TO-220F1 44 TO-220F2 46 Derating above 25°C TO-220/TO-263 1.0 W/°C TO-220F/TO-220F1 0.35 TO-220F2 0.37 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum rat ings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-263 θJc 1.0 °C/W TO-220F/TO-220F1 2.86 TO-220F2 2.72

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-078. G  ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 400 V Gate to Threshold Voltage VGS(THR) VGS = VDS, ID = 250μA 2.0 4.0 V On-State Drain Current (Note 1) ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V 10 A Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V 25 μA VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C 250 μA Gate to Source Leakage Current IGSS VGS = ±20V ±500 nA Drain to Source On Resistance RDS(ON) VGS = 10V, ID = 5.2A (Note 1) 0.38 0.55 Ω Forward Transconductance gFS VDS ≥ 50V, ID = 5.2A (Note 1) 5.8 8.9 S Turn-On Delay Time tDLY(ON) VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature 65 75 ns Rise Time tR 130 145 ns Turn-Off Delay Time tDLY(OFF) 240 260 ns Fall Time tF 145 155 ns Total Gate Charge (Gate to Source + Gate to Drain) QG(TOT) VGS = 10V, ID = 10A, IG(REF) = 1.5mA, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature 138 nC Gate to Source Charge QGS 35 nC Gate to Drain “Miller” Charge QGD 35 nC Input Capacitance CISS VGS = 0V, VDS =25V, f = 1.0MHz 1170 pF Output Capacitance COSS 160 pF Reverse - Transfer Capacitance CRSS 26 pF Internal Drain Inductance LD Measured From the Contact Screw on Tab to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances G S D LD LS 3.5 nH Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die 4.5 nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1) 2.0 V Continuous Source to Drain Current IS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G S D 10 A Pulse Source to Drain Current (Note 2) ISM 40 A Reverse Recovery Time trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs 170 390 790 ns Reverse Recovery Charge QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs 1.6 4.5 8.2 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-078. G  TEST CIRCUITS AND WAVEFORMS VDS L VDD D.U.T. IAS 0.01Ω RG Unclamped Energy Test Circuit Unclamped Energy Waveforms tp BVDSS IAS tAV VDS VDD Switching Time Test Circuit tD(OFF) tF 90% 50%50%VGS VDS tD(ON) 90% tR 10% 10% Resistive Switching Waveforms D.U.T. RG VGS RL VDD tON PULSE WIDTH tOFF DUTG D VDS (ISOLATED SUPPLY) SAME TYPE AS DUT CURRENT REGULATOR IG CURRENT SAMPLING RESISTOR ID CURRENT SAMPLING RESISTOR S 0.3µF0.2µF 12V BATTERY 50kΩ IG(REF) Gate Charge Test Circuit VDD QGS QGD QG(TOT) VGS VDS IG(REF) Gate Charge Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-078. G  TYPICAL PERFORMANCE CUVES 100 0.1 Drain to Source Voltage, VDS (V) Drain Current, ID (A) 102101 103 Drain Current, ID (A) Drain to Source Voltage, VDS (V) 80 200 Output Characteristics 160400 120 Forward Bias Safe Operating Area TC=25℃ TJ=MAX RATED SINGLE PULSE DC 10ms 1ms 100μs 10μs OPERATION IN THIS REGION IS LIMITED BY RDS(ON) VGS = 10V VGS = 6.0V PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS = 5.5V VGS = 5.0V VGS = 4.5V VGS = 4.0V Drain Current, ID (A) Drain to Source Voltage, VDS (V) 4 6 10 Saturation Characteristics 820 Gate to Source Voltage, VSD (V) 2 8 10 Transfer Characteristics 0.1 100 Drain to Source Current, IDS (ON) (A) VGS=5.0V VGS=10V VGS=4.5V PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS=5.5V VGS=4.0V VGS=6.0V TJ = 25℃TJ = 150℃ PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V Normalized Drain to Source Breakdown Voltage Junction Temperature, TJ (℃) 0 80 Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 0.75 160-60 1.25 40 120 0.85 0.95 1.05 1.15 1401006020-40 ID=250μA -20 Capacitance vs. Drain to Source Voltage Capacitance, C (pF) Drain to Source Voltage, VDS (V) 500 1000 2500 2000

1500 CISS

VGS=0V, f=1MHz CISS=CGS+CGD CRSS=CGD COSS≈CDS+CGD COSS CRSS 1 1022 105 2 5 1032 5

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-078. G  TYPICAL PERFORMANCE CUVES (Cont.) Transconductance, gFS (S) Drain Current, ID (A) 8 12 20 Transconduce vs. Drain Current 1640 Source to Drain Current, ISD (A) Source to Drain Voltage, VSD (V) Source to Drain Diode Voltage 0.1 100 1.0 TJ = 25℃ TJ = 150℃ PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX TJ = 25℃ TJ = 150℃ PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX Drain to Source on Resistance, RDS (ON) (Ω) Drain Current, ID (A) 10 40 50 Drain to Source on Resistance vs. Voltage and Drain Current 3020 VGS=10V VGS=20V Pulse Duration=80μs Duty Cycle = 0.5% Max Gate to Source Voltage, VGS (V) Gate Charge, QG (nC) 24 36 60 Gate to Source Voltage vs. Gate Charge 48120 VDS=200V VDS=320V VDS=80V ID=10A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.