UF730 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD UF730 MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2005 Unisonic Technologies Co., Ltd. QW-R502-077,A 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET DESCRIPTION The UF730 power MOSFET is designed for high voltage, high speed power switching applications such as switching power suppliess, switching adaptors. FEATURES * 5.5A, 400V, Low RDS(ON)(1.0Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F *Pb-free plating product number: UF730L ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UF730-TA3-T UF730L-TA3-T TO-220 G D S Tube UF730-TF3-T UF730L-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE UF730L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn
UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-077,A ABSOLUTE MAXIMUM RATINGS (TC = 25¥, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25¥~125¥) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25¥~125¥) VDGR 400 V Gate to Source Voltage V GS ±20 V Continuous I D 6.5 A TC = 100¥ ID 3.5 A Drain Current Pulsed I DM 22 A Maximum Power Dissipation Derating above 25¥ PD 93 0.6 W W/Ċ Single Pulse Avalanche Energy Rating (VDD=50V, starting TJ =25¥, L=17mH, RG=25Ω, peak IAS = 5.5A) EAS 300 mJ Operating Temperature Range T OPR -55 ~ +150 Ċ Storage Temperature Range T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction-Ambient θJA 80 Thermal Resistance Junction-Case θJc 1.67 Ċ/W ELECTRICAL CHARACTERISTICS (TC =25¥, Unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BVDSS I D = 250µA, VGS = 0V 400 V Gate to Threshold Voltage V GS(THR) VDS = VGS, ID = 250µA 2.0 4.0 V On-State Drain Current (Note 1) I D(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V 5.5 A VDS = Rated BVDSS, VGS = 0V 25 µA Zero Gate Voltage Drain Current I DSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125¥ 250 µA Gate to Source Leakage Current I GSS V GS = ±20V ±100 nA Drain to Source On Resistance (Note 1) RDS(ON) I D = 3.0A, VGS = 10V 0.8 1.0 Ω Forward Transconductance (Note 1) gFS V DS ≥ 10V, ID = 3.3A 2.9 4.4 S Turn-On Delay Time t DLY(ON) 10 17 ns Rise Time t R 20 29 ns Turn-Off Delay Time t DLY(OFF) 35 56 ns Fall Time t F VDD = 200V, ID ≈ 5.5A, RGS = 12Ω, RL = 35Ω MOSFET Switching Times are Essentially Independent of Operating Temperature 15 24 ns Total Gate Charge (Gate to Source + Gate to Drain) QG(TOT) 20 35 nC Gate to Source Charge Q GS 3.0 nC Gate to Drain “Miller” Charge Q GD VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA Gate Charge is Essentially Independent of Operating Temperature 10 nC Input Capacitance C ISS 600 pF Output Capacitance C OSS 150 pF Reverse - Transfer Capacitance C RSS VDS = 25V, VGS = 0V,f = 1MHz 40 pF
UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-077,A ELECTRICAL CHARACTERISTICS(Cont.) SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage (Note 1) VSD TJ = 25¥, ISD = 5.5A, VGS = 0V 1.6 V Continuous Source to Drain Current IS 5.5 A Pulse Source to Drain Current (Note 2) ISM 22 A Reverse Recovery Time tRR TJ = 25¥, ISD = 5.5A, dISD/dt = 100A/µs 140 300 660 ns Reverse Recovery Charge QRR TJ = 25¥, ISD = 5.5A, dISD/dt = 100A/µs 0.93 2.1 4.3 µC Notes: 1. Pulse Test: Pulse width≤≤300µs, Duty Cycle≤≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD = 50V, starting TJ = 25¥, L = 17mH, RG = 25Ω, peak IAS = 5.5A.
UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-077,A TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified) Drain Current, ID (A) Case Temperature, TC (¥) 75 100 150 Maximum Contionuous Drain Current vs. Case Temperature 1255025 6100 0.1 Drain to Source Voltage , VDS (V) Drain Current, ID (A) Forward Bias Safe Operating Area 100101 DC 1ms 1000 10Ȱs 10ms TC=25¥ TJ=Max Rated Single Pulse 100Ȱs Operation in This Area is Limited by RDS(on) Drain Current, ID (A) Drain to Source Voltage, VDS (V) 80 120 200 Output Characteristics 160400 VGS=10 VVGS=6.0V Pulse Duration =80Ȱs Duty Cycle = 0.5% Max VGS=5.5V VGS=5.0V VGS=4.5V VGS=4.0V Drain Current, ID (A) Drain to Source Voltage, VDS (V) 80 120 200 Sturation Characteristics 160400 Pulse Duration =80Ȱs Duty Cycle = 0.5% Max VGS=5.5V VGS=5.0V VGS=4.5V VGS=4.0V VGS=6.0V VGS=10V 0.01 Gate to Source Voltage, VGS (V) Drain Current, IDR (A) Transfer Characteristics 0.1 1024 68 TJ=150¥ TJ=25¥ VDS 50V Pulse Duration =80Ȱs Duty Cycle = 0.5% Max Drain to Source on Resistance vs. Gate Voltage and Drain Current Drain to Source on Resistance, RDS (DN) (Ȥ) Drain Current , ID (A) 9 150 1230 VGS=20V VGS=10V Pulse Duration =80Ȱs Duty Cycle = 0.5% Max
UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-077,A TYPICAL PERFORMANCE CUVES Capacitance vs. Drain to Source Voltage Capacitance, C (pF) Drain to Source Voltage, VDS (V) 300 600 1500 CISS 100 VGS=0V, f=1MHz CISS=CGS+CGD CRSS=CGD COSSCDS+CGD COSS CRSS 1200 900 Transconductance, gFS (S) Drain Current , ID (A) 4 61 0 Transconductance vs. Drain Current 0 820 TJ=25¥
10 Pulse Duration =80Ȱs
Duty Cycle = 0.5% Max TJ=150¥ 100 Source to Drain Voltage, VSD (V) Source to Drain Current, ISD (A) Source to Drain Diode Voltage 0.1 Pulse Duration =80Ȱs Duty Cycle = 0.5% Max Gate to Source Voltage vs. Gate Charge Gate to Source Voltage, VGS (V) Gate Charge, QG (nC) 24 400 3280 VDS=320V ID=5.5A VDS=200V VDS=80V TJ=150¥ TJ=25¥ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.