UF640G-TQ2-R

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UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-066.I 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies.  FEATURES * RDS(ON) < 0.18Ω @ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (C RSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-066.I  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen-Free Package 1 2 3 Packing - UF640G-AA3-R SOT-223 G D S Tape Reel UF640L-TA3-T UF640G-TA3-T TO-220 G D S Tube UF640L-TF1-T UF640G-TF1-T TO-220F1 G D S Tube UF640L-TF2-T UF640G-TF2-T TO-220F2 G D S Tube UF640L-TF3-T UF640G-TF3-T TO-220F G D S Tube UF640L-TN3-R UF640G-TN3-R TO-252 G D S Tape Reel UF640L-T2Q-T UF640G-T2Q-T TO-262 G D S Tube UF640L-T2Q-R UF640G-T2Q-R TO-262 G D S Tape Reel UF640L-TQ2-T UF640G-TQ2-T TO-263 G D S Tube UF640L-TQ2-R UF640G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING SOT-223 TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-252 / TO-262 / TO-263

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-066.I  ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 200 V Drain-Gate Voltage (RGS=20kΩ) V DGR 200 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current I D 18 A Pulsed Drain Current (Note 2) I DM 72 A Single Pulse Avalanche Energy Rating (Note 2) E AS 242 mJ SOT-223 66 TO-220 123 TO-220F 40 TO-220F1/TO-220F2 42 TO-252 83 Maximum Power Dissipation TO-262/TO-263 PD 139 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=12A, starting TJ=25°C 3. Pulse width limited by TJ(MAX)  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-223 57 TO-220/TO-220F TO-220F1/TO-220F2 TO-262/TO-263 62.5 Junction to Ambient TO-252 θJA 110 °C/W SOT-223 1.8 TO-220 1.01 TO-220F 3.1 TO-220F1/TO-220F2 2.9 TO-252 1.5 Junction to Case TO-262/TO-263 θJC 0.9 °C/W

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-066.I  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250μA, VGS=0V 200 V Drain-Source Leakage Current I DSS V DS = Rated BVDSS, VGS = 0V 25 μA Gate-Source Leakage Current I GSS V GS= ±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(THR) VGS=VDS, ID=250μA 2 4 V Drain-Source On Resistance R DS(ON) V GS=10V, ID=10A 0.14 0.18 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 805 pF Output Capacitance C OSS 240 pF Reverse Transfer Capacitance C RSS VDS=25V, VGS=0V, f=1MHz 46 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 40 52 ns Turn-ON Rise Time t R 58 72 ns Turn-OFF Delay Time t D(OFF) 127 152 ns Turn-OFF Fall-Time t F VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature 86 104 ns Total Gate Charge Q G(TOT) 89 110 nC Gate Source Charge Q GS 9 nC Gate Drain Charge Q GD VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature I G(REF) = 1.5mA 24 nC SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) V SD T J=25°C, IS=18A, VGS=0V, 2.0 V Continuous Source Current (body diode) IS 18 A Pulse Source Current (body diode) (Note) ISM Integral Reverse p-n Junction Diode in the MOSFET Gate Sourse Drain 72 A Reverse Recovery Time t rr T J=25°C, IS=18A, dIS/dt=100A/μs 120 240 530 ns Reverse Recovery Charge Q RR T J=25°C, IS=18A, dIS/dt=100A/μs 1.3 2.8 5.6 μC Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-066.I  TEST CIRCUIT Fig.3 Switching Time Test Circuit tD(OFF) tF 90% 50%50%VGS VDS tD(ON) 90% tR 10% 10% Fig.4 Resistive Switching Waveforms D.U.T. RG VGS RL VDD tON PULSE WIDTH tOFF

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-066.I  TYPICAL CHARACTERISTICS 0 1.0 2.0 5.00 Saturation Characteristics Drain to Source Voltage, V DS (V) 3.0 4.0 Pulse Duration = 80µs Duty Cycle = 0.5% MAX VGS=6V 01 5 3 0 7 50 0.3 0.6 0.8 1.2 1.5 Drain to Source On Resistance vs. Gate Voltage And Drain Current Drain Current, I D (A) 45 60 VGS=10V Pulse Duration = 80µs Duty Cycle = 0.5% Max UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.