UF640

UF640 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET w w w . u n i s o n i c . c o m . t w 1 of 5 Copyright © 2005 Unisonic Technologies Co., Ltd Ver.A 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer C haracteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. „ FEATURES * RDS(ON) =0.18Ω@VGS = 10V. * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (C RSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F *Pb-free plating product number: UF640L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UF640-TA3-T UF640L-TA3-T TO-220 G D S Tube UF640-TF3-T UF640L-TF3-T TO-220F G D S Tube UF640L-TA 3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Ver.A „ ABSOLUTE MAXIMUM RATING (TC = 25Ċ, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT DrainSource Voltage VDSS 200 V DrainGate Voltage (RGS = 20kΩ) VDGR 200 V GateSource Voltage VGSS ±20 V TC = 25Ċ 18 A Continuous Drain Current TC = 100Ċ ID 11 A Pulsed Drain Current (Note ) IDM 72 A Single Pulse Avalanche Energy Rating (Note ) EAS 580 mJ Maximum Power Dissipation 125 W Dissipation Derating Factor PD 1.0 W/Ċ Junction Temperature T J +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance, Channel to Ambient θJA 62 °C/W Thermal Resistance, Channel to Case θJC 1 °C/W „ ELECTRICAL CHARACTERISTICS (TC = 25 , Ċ unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DrainSource Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 200 V Gate Threshold Voltage V GS(THR) VGS = VDS, ID = 250µA 2 4 V VDS = Rated BVDSS, VGS = 0V 25 µA Drain-Source Leakage Current I DSS VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125Ċ 250 µA On-State Drain Current I D(ON) V DS >ID(ON) x RDS(ON)MAX, VGS = 10V 18 A Gate-Source Leakage Current I GSS V GS = ±20V ±100 nA Drain-Source On Resistance R DS(ON) ID = 10A, VGS = 10V 0.14 0.18 Ω Forward Transconductance g FS V DS ≥ 10V, ID = 11A 6.7 10 S Input Capacitance C ISS 1275 pF Output Capacitance C OSS 400 pF Reverse Transfer Capacitance C RSS VDS = 25V, VGS = 0V, f = 1MHz 100 pF Total Gate Charge (Gate to Source + Gate to Drain) QG(TOT) 43 64 nC Gate-Source Charge Q GS 8 nC Gate-Drain “Miller” Charge Q GD VGS = 10V, ID ≈ 18A, VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature I G(REF) = 1.5mA 22 nC Turn-On Delay Time t D(ON) 13 21 ns Rise Time t R 50 77 ns Turn-Off Delay Time t D(OFF) 46 68 ns Fall Time t F VDD = 100V, ID ≈ 18A, RGS = 9.1Ω, RL = 5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature 35 54 ns

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Ver.A „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Measured From the Contact Screw on Tab to Center of Die 3.5 nH Internal Drain Inductance L D Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die 4.5 nH Internal Source Inductance L S Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances G S D LD LS 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note 1) V SD T J = 25Ċ, IS = 18A, VGS = 0V, 2.0 V Continuous Source Current (body diode) IS 18 A Pulse Source Current (body diode) (Note 1) ISM Integral Reverse p-n Junction Diode in the MOSFET Gate Sourse Drain 72 A Reverse Recovery Time t RR TJ = 25Ċ, IS = 18A, dIS/dt = 100A/µs 120 240 530 ns Reverse Recovery Charge Q RR TJ = 25Ċ, IS = 18A, dIS/dt = 100A/µs 1.3 2.8 5.6 µC Note 1. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. 3. L = 3.37mH, VDD = 50V, RG = 25Ω, peak IAS = 18A, starting TJ = 25Ċ.

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Ver.A „ TYPICAL CHARACTERISTICS 0 1.0 2.0 5.00 Saturation Characteristics Drain to Source Voltage , V DS (V) 3.0 4.0 Pulse Duration = 80µs Duty Cycle = 0.5% MAX VGS=6V Drain Current, ID (A) 01 5 3 0 7 50 0.3 0.6 0.8 1.2 1.5 Drain to Source On Resistance vs. Gate Voltage And Drain Current Drain Current , I D (A) 45 60 Drain to Source on Resistance RDS(ON) (Ω) VGS=10V Pulse Duration = 80µs Duty Cycle = 0.5% Max UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.