UF634G-TA3-T

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UNISONIC TECHNOLOGIES CO., LTD UF634 Power MOSFET www.unisonic.com.tw 1 of 9 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-454.F ADVANCED POWER MOSFET  DESCRIPTION The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower R DS(ON), improved gate charge and so on.  FEATURES * RDS(ON)<0.45Ω @ VGS=10V, ID=8.1A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Current: 10μA (MAX.) @ V DS = 250V * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Extended Safe Operating Area  SYMBOL  ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 123456 7 8 Packing UF634L-TA3-T UF634G-TA3-T TO-220 G D S - - - - - Tube UF634L-TF1-T UF634G-TF1-T TO-220F1 G D S - - - - - Tube UF634L-TF3-T UF634G-TF3-T TO-220F G D S - - - - - Tube UF634L-TN3-R UF634G-TN3-R TO-252 G D S - - - - - Tape Reel - UF634G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 9 www.unisonic.com.tw QW-R502-454.F  MARKING TO-220 / TO-220F / TO-220F1 TO-220F2 / TO-252 / TO-262 SOP-8

UNISONIC TECHNOLOGIES CO., LTD 3 of 9 www.unisonic.com.tw QW-R502-454.F  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-to-Source Voltage V GS ± 30 V Drain-to-Source Voltage V DSS 250 V Continuous Drain Current T C=25°C I D 8.1 A Drain Current-Pulsed (Note 2) I DM 32.4 A Avalanche Current (Note 2) I AR 8.1 A Single Pulsed Avalanche Energy (Note 3) E AS 205 mJ Repetitive Avalanche Energy (Note 2) E AR 7.4 mJ TO-220 74 W TO-220F/TO-220F1 38 W TO-252 50 W Power Dissipation SOP-8 PD 5 W Operating Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note: 3. L=6.24mH, IAS=8.1A, VDD=50V, RG=27 Ω, Starting TJ =25°C  THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT TO-220/TO-220F1 TO-220F 62.5 °C/W TO-252 110 °C/W Junction to Ambient SOP-8 θJA 83 °C/W TO-220 1.69 °C/W TO-220F/TO-220F1 3.29 °C/W TO-252 2.5 °C/W Junction to Case SOP-8 θJC 24 °C/W

UNISONIC TECHNOLOGIES CO., LTD 4 of 9 www.unisonic.com.tw QW-R502-454.F  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 250 V Drain-Source Leakage Current I DSS V DS=250V 10 µA Gate- Source Leakage Current I GSS V GS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS= VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=8.1A 0.45 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 730 950 pF Output Capacitance C OSS 110 130 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 50 60 pF SWITCHING PARAMETERS Total Gate Charge Q G 30 40 nC Gate to Source Charge Q GS 5.8 nC Gate to Drain Charge Q GD VGS=10V, VDS=200V, ID=8.1A (Note 1, 2) 13.5 nC Turn-ON Delay Time t D(ON) 13 40 ns Rise Time t R 14 40 ns Turn-OFF Delay Time t D(OFF) 53 120 ns Fall-Time t F VDD=125V, ID=8.1A, RG=12Ω (Note 1, 2) 21 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) VSD I S=8.1A, VGS=0V, TJ=25°C 1.5 V Maximum Body-Diode Continuous Current I S 8.1 A Pulsed-Source Current (Note 1) I SM 32.4 A Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. 2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%. 3. Essentially Independent of Operating Temperature.

UNISONIC TECHNOLOGIES CO., LTD 5 of 9 www.unisonic.com.tw QW-R502-454.F  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 9 www.unisonic.com.tw QW-R502-454.F  TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 7 of 9 www.unisonic.com.tw QW-R502-454.F  TYPICAL CHARACTERISTICS

UNISONIC TECHNOLOGIES CO., LTD 8 of 9 www.unisonic.com.tw QW-R502-454.F  TYPICAL CHARACTERISTICS(Cont.) 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, IDR (A) Source- Drain Diode Forward Voltage 1.6 25°C 125°C VGS=0V 250μs Pulse Test 100 10-1 Drain-Source Voltage, VDS (V) Capacitance (pF) Capacitance vs. Drain-Source Voltage 750 500 100 101 VGS=0V f = 1MHz CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD CRSS CISS COSS 250 Gate-Source Voltage, VGS (V) Drain-Source Breakdown Voltage, BVDSS, (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Drain Current, ID (A)

UNISONIC TECHNOLOGIES CO., LTD 9 of 9 www.unisonic.com.tw QW-R502-454.F  TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) Case Temperature, TC (°C) 75 100 150 Max. Drain Current vs. Case Temperature 0.0 1255025 Square Wave Pulse Duration, t1 (sec) Thermal Response, θJC (t) Thermal Response 10010-5 100 10-1 10-4 10-3 10-2 10-1 101 D=0.5 0.05 0.02 Single pulse 0.01 0.1 0.2 θJC (t) = 3.13°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t) PDM UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.