UF624

UF624 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

UNISONIC TECHNOLOGIES CO., LTD UF624 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-855.a

4.4 A, 250 V N-CHANNEL

„ DESCRIPTION The UTC UF624 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UF624 is suitable for all commercial-industrial applications. „ FEATURES * RDS(ON)=1.1Ω @VGS=10V,ID=2.6A * Low gate charge ( Max=14nC) * Low C RSS ( Typ=15pF) * High switching speed „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment PackingLead Free Halogen Free 1 2 3 UF624L-TN3-T UF624G-TN3-T TO-252 G D S Tube UF624L-TN3-R UF624G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UF624 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Ver.a „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 250 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous VGS at 10V, TC=25°C ID 4.4 A VGS at 10V, TC=100°C 2.8 A Pulsed (Note 2) I DM 14 A Avalanche Current (Note 2) I AR 4.4 A Avalanche Energy Single Pulsed (Note 3) E AS 100 mJ Repetitive (Note 2) E AR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.8 V/ns Power Dissipation PD 50 W Linear Derating Factor 0.40 W/°C Junction Temperature T J -55~+150 °C Storage Temperature Range T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values be yond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limi ted by maximum junction temperature. 3. V DD=50V, starting TJ=25°C, L=8.3mH, Rg=25Ω, IAS=4.4A. 4. I SD≤4.4A, dI/dt≤90A/μs, VDD≤VDS, TJ≤150°C. „ THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 2.5 °C/W

UF624 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 5 5 . a „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 250 V Breakdown Voltage Temperature Coefficient BV△ DSS/T△ J Reference to 25°C, ID=1mA 0.36 V/°C Drain-Source Leakage Current I DSS VDS=250V, VGS=0V 25 µA VDS=200V, VGS=0V , TJ=125°C 250 µA Gate-Source Leakage Current I GSS VGS=+20V, VDS=0V ±10 µA VGS=-20V, VDS=0V ±10 µA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=2.6A (Note 2) 1.1 Ω Forward Transconductance g FS V DS=50V, ID=2.6A (Note 2) 1.5 S DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 260 pF Output Capacitance C OSS 77 pF Reverse Transfer Capacitance C RSS 15 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=200V, ID=4.4A 14 nC Gate to Source Charge Q GS 2.7 nC Gate to Drain Charge Q GD 7.8 nC Turn-ON Delay Time t D(ON) VDD=125V, ID=4.4A, RG=18Ω, RD=28Ω 7.0 ns Rise Time t R 13 ns Turn-OFF Delay Time t D(OFF) 20 ns Fall-Time t F 12 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 4.4 A Maximum Body-Diode Pulsed Current (Note 1) ISM 14 A Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=4.4A, VGS=0V (Note 2) 1.8 V Body Diode Reverse Recovery Time t RR TJ=25°C, IF=4.4A, dI/dt=100A/µs (Note 2) 200 400 ns Body Diode Reverse Recovery Charge Q RR 0.93 1.9 µC Forward Turn-On Time t ON Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. Pulse width ≤300µs; duty cycle≤2%.

UF624 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 5 5 . a „ TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG Gate Charge Test Circuit Gate Charge Waveforms VGS VGS 200nF Same Type as DUT 3mA 10V tP RG DUT L VDS ID VDD Unclamped Inductive Switching Test Circuit tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2

1 LIAS

2 BVDSS

Unclamped Inductive Switching Waveforms

UF624 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 5 5 . a „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

UF624 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 5 5 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.