UF600G ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M ec h a n i c a l D a t a C ! C a s e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 2.1 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Epoxy: UL 94V-O rate flame retardant Maximum R a tings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 210 280 420 560 700 V Average Rectified Output Current ( N o t e 1 ) @ TA = 55° C IO 6.0 A Non-Repeti tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Vo ltage @IF = 6. 0A V FM 1.0 1.3 1. 7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 2.0 100 µA Reverse Rec overy Time (Note 2) trr 50 75 nS Ty pical Junction Capacitance (Note 3) C j 100 65 pF Operati ng Temperature Range Tj -55 to +150 °C St orage Temperature Range TSTG -55 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case R-6 Dim M in Max A 25.4 — B 8.60 9. C 1.10 1. D 8.60 9. All Di mensions in mm ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 6A GL ASS PASSIVATED ULTRAFAST DIODE Gl ass Passivated Die Construction UF600G – UF6010G UF600G UF600G – UF6010G UF601G UF602G UF603G UF604G UF606G UF608 G UF6010G
V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F 100 200 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 8.3ms single half sine-wave 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° Single phase half wave Resistive or Inductive load Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.01 0.1 1.0 100 0.6 1.0 1.4 1.8 T =25 Cj ° Pulse width= 300 s 2% duty cycle m I , INST ANTANEOUS FORWARD CURRENT (A)F 100 1 10 100 C , CAP ACITANCE (pF)j UF600G-UF606G UF608G-UF6010G T = 25 C f = 1.0MHz j ° UG600G-UF604G UF608G - UF6010G UF606G UF600G – UF6010G UF600G – UF6010G