UF601ZQ UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD UF601ZQ Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2023 Unisonic Technologies Co., Ltd QW-R205-666.F 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET DESCRIPTION The UTC UF601ZQ is a N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switchin g speed. FEATURES * RDS(ON) ≤ 700 Ω @ VGS=0V, ID=3.0mA * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF601ZQL-AE2-R UF601ZQG-AE2-R SOT-23-3 G S D Tape Reel Note: Pin Assignment: G: Gate S : S o u r c e D: Drain MARKING
UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 0 5 - 6 6 6 . F ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) V DSS 600 V Drain-Gate Voltage (Note 2) V DGX 600 V Gate-Source Voltage V GSS ± 2 0 V Drain Current Continuous I D 0.185 A Pulsed I DM 0.740 A Power Dissipation P D 0 . 5 0 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond whic h the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ=+25°C~+150°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 250 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=-5.0V 600 V Drain-Source Leakage Current I D(OFF) V DS=600V, VGS=-5.0V 0.1 μA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +10 μA Reverse V GS=-20V, VDS=0V -10 μA ON CHARACTERISTICS Gate to Source Cut Off Voltage V GS(OFF) V DS=3V, ID=8µA -1.0 -3.0 V Drain-Source Leakage Current I DSS V DS=25V, VGS=0V 7 mA Static Drain-Source On-State Resistance R DS(ON) V GS=0V, ID=3.0mA 700 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=-5V, VDS=25V, f=1.0MHz 12.4 pF Output Capacitance C OSS 7.5 pF Reverse Transfer Capacitance C RSS 4.3 pF SWITCHING PARAMETERS Total Gate Charge Q G VDS=30V, VGS=-5~5V, ID=5mA (Note 1, 2) 0.144 nC Gate to Source Charge Q GS 0.05 nC Gate to Drain Charge Q GD 0.03 nC Turn-ON Delay Time t D(ON) VDD=30V, VGS=-5~5V, ID=5mA, RG=20Ω (Note 1, 2) 4 0 n s Rise Time t R 44 ns Turn-OFF Delay Time t D(OFF) 100 ns Fall-Time t F 180 μs SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=3mA , VGS=-10V 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 380μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 0 5 - 6 6 6 . F TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 0 5 - 6 6 6 . F TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that resul t from using products at values that exceed, even momentarily, rated va lues (such as maximum ratings , operating condition ranges, or other parameters) listed in products specifications of any and all UT C products described or contained herein. UTC products are not designed for use in life support appliance s, devices or systems where malfunction of these products can be reasonably expected to result in perso nal injury. Reproduction in whole or in part is prohibited without the pr ior written consent of the cop yright owner. UTC reserves the right to make changes to information published in this document, includi ng without limitation specifications and product descriptions, at any time and without notice. This docu ment supersedes and replaces all information supplied prior to the publication hereof.