UNISONIC TECHNOLOGIES CO., LTD
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UNISONIC TECHNOLOGIES CO., LTD UF540 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-715.C 27A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF540 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. The UTC UF540 is suitable for AC&DC motor controls and switching power supply, etc FEATURES * RDS(on) < 85mΩ @ VGS = 10 V, ID=15A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF540L-TA3-T UF540G-TA3-T TO-220 G D S Tube UF540L-TF3-T UF540G-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 7 1 5 . C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) V DSS 100 V Gate-Source Voltage V GSS ±20 V TC=25°C 27 A Continuous TC=100°C ID 17 A Drain Current Pulsed I DM 108 A TO-220 125 W Power Dissipation (TC=25°C) TO-220F PD 50 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ = +25~+150°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT TO-220 1.0 °C/W Junction to Case TO-220F θJC 2.46 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 100 V Drain-Source Leakage Current I DSS V DS=100V, VGS=0V 250 µA Forward V GS=+20V, VDS=0V +500 nAGate-Source Leakage Current Reverse IGSS VGS=-20V, VDS=0V -500 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=15A 85 m Ω DYNAMIC PARAMETERS Input Capacitance C ISS 1680 pF Output Capacitance C OSS 250 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 40 pF SWITCHING PARAMETERS Turn-ON Delay Time t D(ON) 90 ns Rise Time t R 120 ns Turn-OFF Delay Time t D(OFF) 300 ns Fall-Time t F VDD=30V, ID=0.5A, VGS=10V, RGEN=25Ω (Fig.1, 2) (Note 2) 145 ns Total Gate Charge Q G V DD=80V, ID=16A, VGS=10V, 100 nC Gate to Source Charge Q GS 12 nC Gate to Drain Charge Q GD 30 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=27A, VGS=0V 2.0 2.5 V Body Diode Reverse Recovery Time t rr I S=4.0A, dIS/dt=25A/µs 300 ns Maximum Body-Diode Continuous Current I S 27 A Maximum Body-Diode Pulsed Current I SM 108 A Notes: 1. Pulse width limited by TJ. 2. Switching time measurements performed on LEM TR-58 Test equipment.
UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 7 1 5 . C TEST CIRCUITS AND WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 5 0 2 - 7 1 5 . C TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.50 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 1.5 2 312 . 5 100 150 200 250 300 0 25 75 100 12550 100 150 200 250 300 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (V) 00 . 1 0 . 3 0.5 0 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) 0.4 1.0 VGS=10V, ID=15A VGS=10V, ID=2A 0.2 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.