UF5402-E3 VISHAY | Alldatasheet

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Technical content

Document Number: 88756 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 23-Oct-09 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com Soft Recovery Ultrafast Plastic Rectifier UF5400 thru UF5408 Vishay General Semiconductor

FEATURES

  • Glass passivated chip junction
  • Ultrafast reverse recovery time
  • Low forward voltage drop
  • Low switching losses, high efficiency
  • High forward surge capability
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V to 1000 V IFSM 150 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V TJ max. 150 °C DO-201AD MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 UF5407 UF5408 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 500 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 210 280 350 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 300 400 500 600 800 1000 V Maximum average forward rectified current, 0.375" (9.5 mm) lead length at T A= 55 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 88756 2 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com Revision: 23-Oct-09 UF5400 thru UF5408 Vishay General Semiconductor Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) Thermal resistance from junction to lead and from junction to ambient with 0.375" (9.5 mm) lead length, both leads attached to heatsink RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 UF5407 UF5408 UNIT Maximum instantaneous forward voltage

3.0 A V

F (1) 1.0 1.7 V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C IR μA TA = 100 °C 75 200 Maximum reverse recovery time I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 °C t rr 50 75 ns Typical junction capacitance 4.0 V, 1 MHz C J 45 36 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL UF5400 UF5401 UF5402 UF5403 UF5404 UF5405 UF5406 UF5407 UF5408 UNIT Typical thermal resistance RθJA (1) 20 °C/W RθJL (1) 8.5 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE UF5406-E3/54 1.172 54 1400 13" diam eter paper tape and reel UF5406-E3/73 1.172 73 1000 Ammo pack packaging 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 Average Forwar d Rectified Current (A) Ambient Temperature (°C) Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Average Forward Current (A) Average Power Lo ss (W) D = tp/T t p T D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0

Document Number: 88756 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 23-Oct-09 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com UF5400 thru UF5408 Vishay General Semiconductor Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 1 10 100 100 125 150 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TA = 55 °C 8.3 ms Single Half Sine-Wave 0.01 0.1 100 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle UF5400 thru UF5404 UF5405 thru UF5408 0 20 40 60 80 100 0.01 0.1 100 Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Leakage Current (μA) UF5400 thru UF5404 UF5405 thru UF5408 TJ = 125 °C TJ = 25 °C TJ = 100 °C TJ = 125 °C TJ = 100 °C 0.1 1 10 100 100 120 140 160 Reverse Voltage (V) Junction Capacit ance (pF) UF5400 thru UF5404 UF5405 thru UF5408 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2)

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