UF5400G DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF 5400G UF 5402G UF 5403G UF 5404G UF 5405G UF 5406G UF 5407G UF 5408G UNITS Maximum recurrent peak reverse voltage V RRM 50 200 300 400 500 600 800 1000 V Max imum RMS v oltage V RMS 35 140 210 280 350 420 560 700 V Maximum DC blocking voltage V DC 50 200 300 400 500 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage v at 3.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. I FSM UF 5401G I F(AV) 3.0 150.0 100 UF5400G -- UF5408G DO - 27 The plastic material carries U/L recognition v 94V-0 Easily cleaned with alcohol,Isopropanol and similar solvents GLASS PASSIVATED RECTIFIERS VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A MAXIMUM RATINGS AND ELECTRICA L CHA RACTERISTICS 100 AI R 100.0 10.0 1.0 1.7 A A 50 75 3. Thermal resistance junction to ambient. NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. - 55 ---- + 175 - 55 ---- + 175 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
1.5 3.0 20 40 60 80 100 120 140 160 2.5 2.0 1.0 0.5 180 Single Phase Half Wave 60H Z Resistive or Inductive Load AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT UF5400G --- UF5408G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT SET TIME BASE FOR 10/20 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS 0.01 0.1 100 UF5400G--UF5404G Pulse width=300 s T J =25 UF5405G--UF5408G T J =25 f=1MHz 0.1 1 4 10 100 1000 100 125 1 10 100 8.3ms Single Half Sine-Wave 150 -1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 50VDC (approx) (-) (-) (-) Diode Semiconductor Korea www.diode.kr