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UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-845.B -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to pr ovide the customers with high switching speed and a minimum on-state resistance. The UTC UF5210 is suitable for all commercial-industrial applications, etc.  FEATURES * RDS(ON)<0.06Ω @ VGS=-10V * High Switching Speed * Dynamic dv/dt Rating  SYMBOL TO-220  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF5210L-TA3-T UF5210G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING INFORMATION PACKAGE MARKING TO-220

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 5 . B  ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -100 V Gate-Source Voltage V GSS ±20 V Drain Current Continuous VGS=-10V, TC=25°C ID -40 A VGS=-10V, TC=100°C -29 A Pulsed (Note 2) I DM -140 A Avalanche Current (Note 2) I AR -21 A Avalanche Energy Single Pulse (Note 3) E AS 780 mJ Repetitive (Note 2) E AR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation (TC=25°C) PD 200 W Linear Derating Factor 1.3 W/°C Junction Temperature T J -55~+150 °C Storage Temperature Range T STG -55~+150 °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width lim ited by max. junction temperature. 3. V DD=-25V, Starting TJ=25°C, L=3.5mH, RG=25Ω, IAS=-21A. 4. I SD≤-21A, di/dt≤-480A/µs, VDD≤BVDSS, TJ≤150°C  THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 0.75 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 5 . B  ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=-250µA -100 V Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA -0.11 V/°C Drain-Source Leakage Current I DSS VDS=-100V, VGS=0V -25 µA VDS=-80V, VGS=0V, TJ=150°C -250 µA Gate-Source Leakage Current Forward IGSS VGS=20V, VDS=0V 100 nA Reverse V GS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Static Drain-to-Source On-Resistance R DS(ON) V GS=-10V, ID=-24A (Note 2) 0.06 Ω Gate Threshold Voltage V GS(TH) V DS=VGS, ID=-250µA -2.0 -4.0 V DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=-25V, f=1.0MHz 2700 pF Output Capacitance C OSS 790 pF Reverse Transfer Capacitance C RSS 450 pF SWITCHING PARAMETERS Total Gate Charge Q G ID=-21A, VDS=-80V, VGS=-10V (Note 2) 180 nC Gate-to-Source Charge Q GS 25 nC Gate-to-Drain ("Miller") Charge Q GD 97 nC Turn-ON Delay Time t D(ON) VDD=-50V, ID=-21A, RG=2.5Ω RD=2.4Ω, (Note 2) 17 ns Rise Time t R 86 ns Turn-OFF Delay Time t D(OFF) 79 ns Fall Time t F 81 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body Diode Continuous Source Current IS -40 A Maximum Body-Diode Pulsed Current (Note 1) ISM -140 A Drain-Source Diode Forward Voltage V SD T J=25°C, IS=-21A, VGS=0V (Note 2) -1.6 V Body Diode Reverse Recovery Time t RR TJ=25°C, IF=-21A, di/dt=-100A/µs (Note 2) 170 260 ns Body Diode Reverse Recovery Charge Q RR 1.2 1.8 µC Forward Turn-On Time t ON Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note: 1. Repetitive rating; pulse width li mited by max. junction temperature. 2. Pulse width ≤300µs; duty cycle≤2%.

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 5 . B  TEST CIRCUITS AND WAVEFORMS

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 5 . B  TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 8 4 5 . B  TYPICAL CHARACTERISTICS Drain Current, -ID (µA) Drain Current, -ID (µA) Drain Current, -ID (A) Body Diode Continuous Source Current, -IS (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.