UF520

UF520 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UF520 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-659.a 9.2A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF520 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high Input Impedance and high switching speed. This UTC UF520 is suitable for motor drivers, switching convertors, switching regulators, relay drivers and drivers for high power bipolar switching transistors. „ FEATURES * RDS(ON)=0.25Ω @ VGS=10V,ID=5.6A * High Input Impedance * High Switching Speed „ SYMBOL 1.Gate 2.Drain 3.Source „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF520L-TA3-T UF520G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UF520 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 5 9 . a „ ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ±20 V TC=25°C 9.2 A Continuous TC=100°C ID 6.5 A Drain Current Pulsed (Note 2) I DM 37 A Single Pulsed Avalanche Energy (Note 3) E AS 36 mJ Power Dissipation P D 50 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by Max junc tion temperature. See Transient Thermal Impedance curve 3. V DD=25V, starting TJ=25°C, L=640mH, RG=25Ω, peak IAS=9.2A „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 80 °C/W Junction to Case θJC 2.5 °C/W

UF520 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 5 9 . a „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 100 V Drain-Source Leakage Current I DSS V DS=95V, VGS=0V 250 µA Gate- Source Leakage Current I GSS V GS=±20V, VDS=0V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=5.6A (Note 1) 0.25 0.27 Ω On State Drain Current (Note 1) I D(ON) V GS=10V, VDS>ID(ON)×RDS(ON)MAX 9.2 A DYNAMIC PARAMETERS Input Capacitance C ISS 350 pF Output Capacitance C OSS 130 pF Reverse Transfer Capacitance C RSS VGS=0V, VDS=25V, f=1.0MHz 25 pF SWITCHING PARAMETERS Total Gate Charge Q G 10 30 nC Gate to Source Charge Q GS 2.5 nC Gate to Drain Charge Q GD VGS=10V, ID=9.2A, VDS=0.8*Rated BVDSS, IG(REF)=1.5mA (Note 2) 2.5 nC Turn-ON Delay Time t D(ON) 9 13 ns Rise Time t R 30 63 ns Turn-OFF Delay Time t D(OFF) 18 70 ns Fall-Time t F VDD=50V, ID≈9.2A, RG=18Ω, RL=5.5 Ω (Note 3) 20 59 ns Notes: 1. Pulse test: pulse width ≤300µs, duty cycle≤2% 2. Gate Charge is Essentially I ndependent of Operating Temperature 3. MOSFET Switching Times are Essentia lly Independent of Operating Temperature „ SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source to Drain Diode Voltage V SD T J=25°C,ISD=9.2A,VGS=0V (Note 1) 2.5 V Continuous Source to Drain Current I SD 9.2 A Pulse Source to Drain Current (Note 2) I SDM Note 3 37 A Note : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve 3. Modified MOSFET Symbol Showin g the Integral Reverse P-N Junction Diode.

UF520 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 5 9 . a „ TEST CIRCUITS AND WAVEFORMS

UF520 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 5 9 . a „ TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current Peak Diode Recovery dv/dt Test Circuit and Waveforms

UF520 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 6 5 9 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.