UF450L-TF1-T

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UNISONIC TECHNOLOGIES CO., LTD UF450 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-185.H 14A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UF450 uses advanced UTC technology to provide excellent R DS (ON) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, invert ers, choppers, audio amplifiers and high energy pulse circuits.  FEATURES * RDS(ON) < 0.4Ω@VGS = 10V * Ultra Low Gate Charge (Max. 150nC ) * Low Reverse Transfer Capacitance ( C RSS = Typical 340pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability  SYMBOL 1.Gate 3.Source 2.Drain  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF450L-TF1-T UF450G-TF1-T TO-220F1 G D S Tube UF450L-TF2-T UF450G-TF2-T TO-220F2 G D S Tube UF450L-T47-T UF450G-T47-T TO-247 G D S Tube UF450L-TC3-T UF450G-TC3-T TO-230 G D S Tube UF450L-T3P-T UF450G-T3P-T TO-3P G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . H  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate to Source Voltage V GSS ±20 V Continuous Drain Current I D 14 A Pulsed Drain Current (Note 2) I DM 56 A Avalanche Current (Note 2) I AR 14 A Single Pulse Avalanche Energy (Note 3) E AS 760 mJ Power Dissipation (TC=25°C) TO-220F1 PD W TO-220F2 38 TO-247 190 TO-230 147 TO-3P 215 Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Junction Temperature T J +150 °C Strong Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) VDD=50V, starting TJ=25°C, L=7.0mH, IAS=14A, RG=25Ω ISD≤14A, di/dt≤130A/μs, VDD≤BVDSS , TJ≤150°C  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F1/ TO-220F2 TO-230 θJA 62.5 °C/W TO-247/TO-3P 40 Junction to Case TO-220F1 θJC 3.47 °C/W TO-220F2 3.29 TO-247 0.65 TO-230 0.85 TO-3P 0.58

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . H  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0 V, ID=250µA 500 V Drain-Source Leakage Current I DSS VDS=500V,VGS=0V 25 µA VDS=400V,VGS=0V, TJ=125°C 250 µA Gate-Source Leakage Current Forward IGSS VGS=20V 100 nAReverse V GS=-20V -100 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1.0mA 0.63 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=8.4A 0.31 0.4 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f=1.0MHz 2600 pF Output Capacitance C OSS 720 pF Reverse Transfer Capacitance C RSS 340 pF SWITCHING PARAMETERS (Note 1) Total Gate Charge Q G VDS=400V, VGS =10V, ID=14A (Note 1,2) 150 nC Gate Source Charge Q GS 20 nC Gate Drain Charge Q GD 80 nC Turn-ON Delay Time t D(ON) VDD=250V, ID=14A, RG=6.2Ω , RD=17Ω(Note 1,2) 17 ns Turn-ON Rise Time t R 47 ns Turn-OFF Delay Time t D(OFF) 92 ns Turn-OFF Fall-Time t F 44 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I S=14A, VGS=0V 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 14 A Maximum Pulsed Drain-Source Diode Forward Current ISM 56 A Reverse Recovery Time t rr IF=14A, dI/dt≤100A/μs, VDD≤50V (Note 1) 540 810 ns Reverse Recovery Charge Q RR 4.8 7.2 µc Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . H  TEST CIRCUITS AND WAVEFORMS VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms 10V Charge QGS QGD QG VGS Gate Charge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . H  TEST CIRCUITS AND WAVEFORMS (Cont.) Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . H  TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.