UF450

UF450 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UF450 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-185.A

12 Amps, 500 Volts

„ DESCRIPTION The UF450 uses advanced UTC technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. „ FEATURES * RDS(ON) = 0.4Ω@VGS = 10V * Ultra low gate charge (max. 120nC ) * Low reverse transfer capacitance ( C RSS = typical 240pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-247 *Pb-free plating product number: UF450L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UF450-T47-T UF450L-T47-T TO-247 G D S Tube

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Gate-to-Source Voltage V GSS ±20 V Continuous Drain Current I D 12 A Pulsed Drain Current(Note 1) I DM 48 A Avalanche Current I AR 12 A Single Pulse Avalanche Energy (Note 2) E AS 8.0 mJ Power Dissipation TC=25¥) PD 190 W Peak Diode Recovery dv/dt (Note 2) dv/dt 3.5 V/ns Junction Temperature T J +150 ¥ Strong Temperature T STG -55 ~ +150 ¥ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction-to- Ambient θJA 30 ¥/W Junction-to-Case θjC 0.83 ¥/W „ ELECTRICAL CHARACTERISTICS (TJ =25¥, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0 V, ID =1.0 mA 500 V Drain-Source Leakage Current I DSS V DS=400V,VGS =0 V 25 µA Gate-Source Leakage Current I GSS V DS =0 V, VGS = ±20V ±100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25 , IĊ D=1.0mA 0.78 V/¥ ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS =VGS, ID =250 µA 2.0 4.0 V VGS =10V, ID =7.75A 400 Static Drain-Source On-State Resistance R DS(ON) VGS =10V, ID =12A 500 mΩ DYNAMIC PARAMETERS Input Capacitance C ISS 2700 Output Capacitance C OSS 600 Reverse Transfer Capacitance C RSS VDS=25V, VGS =0V, f=1.0MHz 240 pF SWITCHING PARAMETERS Total Gate Charge Q G 55 120 Gate Source Charge Q GS 5.0 19 Gate Drain Charge Q GD VDS =250V, VGS =10V, ID =12A 27 70 nC Turn-ON Delay Time t D(ON) 35 Turn-ON Rise Time t R 190 Turn-OFF Delay Time t D(OFF) 170 Turn-OFF Fall-Time t F VDD=250V, ID =12A, RG =2.35Ω 130 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD IS=12A,VGS=0V, TJ =25¥ 1.7 V Maximum Continuous Drain-Source Diode Forward Current IS 12 Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time t RR 1600 ns Reverse Recovery Charge Q RR IF=12 A, dI/dt≤100A/µs, TJ =25¥,VDD≤50V (Note3) 14 µc Notes: 1. Repetitive Rati ng : Pulse width limited by TJ 2. VDD = 50V, starting TJ = 25¥, Peak IL = 12A, ISD ≤ 12, di/dt ≤ 130A/µs,VDD≤ 500V, TJ≤150¥Suggested RG =2.35Ω 3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . A „ TEST CIRCUITS AND WAVEFORMS VDS VGS td(on) tr tftd(off) Switching Time WaveformsSwitching Time Test Circuit 10V Pulse Width≤1µs Duty Cycle ≤0.1 VDSVGS RG VGS= DUT VDD RD tP IAS V(BR)DSS Unclamped Inductive WaveformsUnclamped Inductive Test Circuit VDS L VGS RG VGS =10V tP DUT IAS 0.01Ω -VDD 15V Driver

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . A „ TYPICAL CHARACTERISTICS 4.5V 4.5V 20Ȱs Pulse Width TC=150¥ 20Ȱs Pulse Width TC=25¥ 101 100 100 101 100 100 101 101 Drain Current,ID (A) Drain Current,ID (A) Drain to Source Voltage,VDS (V) Drain to Source Voltage,V DS (V) Typical Output Characteristics Typical Output Characteristics 25¥ 150¥ 101 100 45 6 78 9 1 0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -40 -20 0 20 160 140120100806040 VGS=10V ID=12A Junction Temperature,TJ (¥) Normalized On-Resistance vs. Temperature Normalized Drain to Source On- Resistance,RDS(ON) Gate to Source Voltage,VGS (V) Drain Current,ID (A) Typical Transfer Characteristics VDS=50V 20Ȱs Pulse Width Single Pulse Energy,EAS (mJ) Drain Current,ID (A)

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . A „ TYPICAL CHARACTERISTICS(Cont.) Gate to Source Voltage,VGS (V) Capacitance (pF) 101 100 10-1 0.1 102 103 1 10 102 103 VGS=0V 25¥ 150¥ TC=25¥ TJ=150¥ Single Pulse Body-Diode Characteristics Reverse Drain Current,IS (A) Body Diode Forward Voltage,VSD (V) Drain Current,ID (A) Drain to Source Voltage,VDS (V) Maximum Safe Operating Area RDS(ON) Limited 10Ȱs 100Ȱs 1ms 10ms 0.1 10-2 10-3 10-5 10-4 10-3 10-2 0.1 11 0 Rectangular Pulse Duration,t1 (s) Thermal Response, ZthJC Maximum Effective Transient Thermal Impedance,Junction-to-Case In descending order PDM t t 1.Duty Factor,D=t1/t2 2.Peak TJ=PDM.ZthJC+TC

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 1 8 5 . A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.