UF450 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor UF450
- FEATURES
- WithTO-247 packaging
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 12 A IDM DrainCurrent-SinglePulsed 48 A PD TotalDissipation 190 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.83 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor UF450 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1.0mA 500 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=12A 500 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.2 μA IDSS Drain-SourceLeakageCurrent VDS=400V;VGS=0V 25 μA VSDF Diodeforwardvoltage ISD=12A,VGS =0V 1.7 V