UF4001G DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF 4003G UF 4004G UF 4005G UF 4006G UF 4007G UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @1.0 A V F V M axim um reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG DO - 41 UF 4001G Easily cleaned with Freon,Alcohil,Isopropanop 100 UF4001G---UF4007G 2. Thermal resistance f rom junction to ambient. A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +175 - 55---- +175 50.0 20 10 I F(AV) The plastic material carries U/L recognition 94V-0 I R 30.0 10.0 100.0 1.0 1.7 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 100 UF 4002G 1.0 A GLASS PASSIVATED RECTIFIERS AI FSM Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
AVERAGE FORWARD CURRENT, AMPERES PEAK FORWARD SURGE CURRENT AMPERES AMPERES FIG.3 --TYPICAL INSTANTANEOUS FORWARD FIG.4--TYPICAL REVERSE CHARACTERISTICS NUMBER OF CYCLES AT 60Hz INSTANTANEOUS REVERSE LEAKAGE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.2 --PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, UF4001G --- UF4007G FIG.1 -- FORWARD CURRENT DERATING CURVE REVERSE VOLT AGE,VOLT S PERCENT OF RATED PEAK REVERSE VOLTAGE,% CURRENT, AMPERES FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF .1 1.0 T J =25 100 200 .2 2 4 10 20 40 100 UF4001G-UF4004G UF4005G-UF4007G T J =50 0.1 0 20 40 60 80 100 120 140 100 T J =25 1000 T J =50 1.0 2.0 0 50 100 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 17525 12575 1 10 100 5 5 0 8.3ms Single Half Sine-Wave .01 1.0 100 .2 2.0 UF4001G-4004G UF4005G-4007G 0.1 Diode Semiconductor Korea www.diode.kr