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UNISONIC TECHNOLOGIES CO., LTD UF3N30Z Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-826. B 3A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF3N30Z is an N -channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide c ustomers with a minimum on -state resistance, low gate charge and superior switching performance.  FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested  SYMBOL 1.Gate 2.Drain 3.Source TO-252 TO-251  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF3N30ZL-TM3-R UF3N30ZG-TM3-R TO-251 G D S Tape Reel UF3N30ZL-TN3-T UF3N30ZG-TN3-T TO-252 G D S Tube UF3N30ZL-TN3-R UF3N30ZG-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source UF3N30ZL-TM3-R (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube, R: Tape Reel (2) TM3: TO-251, TN3: TO-252 (3) L: Lead Free, G: Halogen Free

UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R502-826. B  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current Continuous ID 3 A Pulsed IDM 12 A Avalanche Energy EAS 52 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 300 V Drain-Source Leakage Current IDSS VDS=300V 1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V 10 µA Reverse VGS=-20V, VDS=0V -10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A 2 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz 200 pF Output Capacitance COSS 90 pF Reverse Transfer Capacitance CRSS 30 pF SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=1.3A, IG=100µA, VGS=10V 4 nC Gate to Source Charge QGS 0.64 nC Gate to Drain Charge QGD 1.6 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω, VGS=0~10V 10 ns Rise Time tR 50 ns Turn-OFF Delay Time tD(OFF) 30 ns Fall-Time tF 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 3 A Maximum Body-Diode Pulsed Current ISM 12 A Drain-Source Diode Forward Voltage VSD IS=0.85A 1.3 V

UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw QW-R502-826. B  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.70 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 100 150 200 250 300 0 70 210 280 350140 100 150 200 250 300 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (V) 0.2 0 0.2 0.4 0.6 0.1 0.3 1.0 0 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Drain Current, ID (A) 0.2 0.4 0.8 1.0 0.8 0.6 1.0 0.4 0.5 VGS=10V, ID=0.425A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.