UF3710L-TQ2-R

UF3710 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R203-036.E 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suit able for use as a load switch or in PWM applications. „ FEATURES * RDS(ON) = 23mΩ @VGS = 10 V * Ultra low gate charge ( typical 130 nC ) * Low reverse transfer Capacitance ( C RSS = typical 72 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UF3710L-TA3-T UF3710G-TA3-T TO-220 G D S Tube UF3710L-TQ2-T UF3710G-TQ2-T TO-263 G D S Tube UF3710L-TQ2-R UF3710G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R203-036.E „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage V GSS ±20 V Drain-Source Voltage V DSS 100 V Drain Current Continuous (VGS=10V) I D 57 A Pulsed (Note 2) I DM 230 Avalanche Current (Note 2) I AR 57 A Avalanche Energy Repetitive(Note 2) E AR 20 mJ Single Pulsed(Note 3) E AS 1060 (Note 4) Power Dissipation P D 165 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V This is a typical value at device destruction and represents operation outside rated limits. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 /W ℃ Junction to Case θJC 0.75 /W ℃ „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=250μA 100 V Drain-Source Leakage Current I DSS V DS=100V, VGS=0V 25 μA Gate-Source Leakage Current I GSS V GS=±20V, VDS=0V ±100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID=1mμA,Referenced to 25℃ 0.13 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS=10V, ID=28A (Note) 23 m Ω Forward Transconductance g FS V DS=25V, ID=28 A 32 S DYNAMIC PARAMETERS Input Capacitance C ISS VDS=25V, VGS=0V, f =1MHz 3130 pF Output Capacitance C OSS 410 pF Reverse Transfer Capacitance C RSS 72 pF

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R203-036.E „ ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING PARAMETERS Total Gate Charge Q G VDS=80V, ID=28A, VGS=10V 130 nC Gate Source Charge Q GS 26 nC Gate Drain Charge Q GD 43 nC Turn-ON Delay Time t D(ON) VDD=50V, ID=28A, RG=2.5Ω VGS=10V (Note) 12 ns Turn-ON Rise Time t R 58 ns Turn-OFF Delay Time t D(OFF) 45 ns Turn-OFF Fall-Time t F 47 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD I S=28A, VGS=0V (Note) 1.2 V Maximum Continuous Drain-Source Diode Forward Current IS MOSFET symbol showing the integral reverse P-N junction diode. 57 A Maximum Pulsed Drain-Source Diode Forward Current ISM 230 A Body Diode Reverse Recovery Time t rr IF=28A, dI/dt=100A/μs (Note) 140 220 ns Body Diode Reverse Recovery Charge Q RR 670 1010 nC Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R203-036.E „ TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R203-036.E „ TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. VGS0.2μF 12V Charge QGS QGD QG VGS 3mA VG RDRG Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R203-036.E „ TYPICAL CHARACTERISTICS Drain Current,ID(uA) Drain Source Breakdown Voltage,BVDS(V) 40 80 Drian Current vs Drain Source Breakdown Voltage 100 800 400 500 140120 160 200 300 600 700 Drain Current,ID(uA) Gate Threshold Voltage. VTH(V) 1 2 Drian Current vs Gate Threshold Voltage 400 200 250 43 5 100 150 300 350 Source to Drain Voltage VSD(V) 00 . 2 Drain Current. Source to Drain Voltage 0.60.4 0.8 1.0 0 100 300 200 400 500 Drain - Source On-State Resistance Characteristics ID=28A VGS=10V Drain to Source Voltage VDS(mV) UTC assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.